Research publications

(i) Publications in Refereed International Journals

1.  K.N. Bhat & Nandita Basu, High pressure thermal oxidation of GaAs at 250oC, Electronics Lett., vol.23, no.24, pp.1329-1330, 1987.

2. Nandita Basu & K.N. Bhat, High pressure oxidation of Silicon for production of ultrathin-oxide MIS-diodes, Thin Solid Films, vol.156, no.2, pp.243-257, 1988.

3.  Nandita Basu & K.N. Bhat, High pressure thermal oxidation of n-GaAs in an atmosphere of oxygen and water vapour, J. Appl. Phys., vol.63, no.11, pp.5500-5506, 1988.

4. P. Barman, Nandita Basu & S.Basu, Thermal oxidation of GaSb and study of oxide properties Semicon. Sc. Technol., vol.6, pp.129-131, 1991.

5. S.Basu, Nandita Basu & P. Barman, Electrical characterisation of thermally grown native oxide on Gallium Antimonide, Mat. Sc. and Engg. B9, pp.47-50, 1991.

6. K.N. Bhat & Nandita Basu, Surface passivation technology for GaAs, Jl. of I.E.T.E., Spl. Issue on III-V Semiconductors & Devices, vol.38, no.2&3, pp.85-92, 1992.

7. S.Basu, Nandita Basu & P. Barman, Growth of thermal oxide on GaSb and the oxide characterisation, Jl. of I.E.T.E., Spl. Issue on III-V Semiconductors & Devices, vol.38,no.2&3, pp.181-183, 1992.

8. R.Riemenschneider, Nandita DasGupta, R. Schultz, H.L.Hartnagel & H.Krautle, Low temperature deposition of SiO2 and PSG using SiH4, N2O and Phosphorus vapour for damage-free passivation of InP-based PIN diodes by Plasma and Photo-assisted LPCVD, Appl. Surf. Sc. vol.69, pp.277-280, 1993.

9. Nandita DasGupta & A.DasGupta, An analytical expression for sheet carrier concentration versus gate voltage for HEMT modelling, Solid-State Electronics, vol.36, no.2, pp.201-203, Feb.1993.

10. Nandita DasGupta, R.Riemenschneider & H.L.Hartnagel, Electrochemical capacitance- profiling: a new technique to study plasma damage during a Plasma Enhanced Chemical Vapour Deposition Jl. of The Electrochem. Soc., vol.140, no.7, pp.2038-2041, July 1993.

11. A.DasGupta & Nandita DasGupta, A simple analytical model of gate capacitance-voltage characteristics of HEMTs, Solid-State Electronics, vol.37, no.7, pp.1377-1381, July 1994.

12. N. DasGupta & G.B.Srinivasa Murthy, Study of gate length, channel length and gate-source spacing on the GaAs MESFET characteristics, Solid-State Phenomena, vol.55, pp. 26-28, 1997.

13. Nandita DasGupta & A.DasGupta, A new SPICE MOSFET Level-3 like model of HEMTs for circuit simulation, IEEE Trans. Electron Devices, vol. 45,no.7, 1494-1500, July 1998.

14. Kishore Kuna V.S.R., Naveen Kumar Vangala, Amitava DasGupta and Nandita DasGupta, Effect of etch mask and etching solution on InP micromachining to form V-grooves, Jl. of The Electrochem. Soc., vol.148, no.4, C322-C326, April 2001.

 15. Roy Paily, Amitava DasGupta, Nandita DasGupta, Pijush Bhattacharya, Pankaj Misra, Tapas Ganguli, Lalit M.Kukreja, A.K.Balamurugan, S.Rajagopalan and A.K.Tyagi, Pulsed Laser Deposition of TiO₂ for MOS Gate Dielectric, App. Surf. Sc. vol.187 no. 3-4, pp. 300-307, 2002.

16. E. Anulekha Manjari, A. Subrahmanyam, Nandita DasGupta and A.DasGupta, Electrical characterization of metal-insulator-semiconductor capacitors with xerogel as dielectric App. Phys. Lett. vol.80, no.10, 2002.

17. Roy Paily, Amitava DasGupta and Nandita DasGupta, Improvement in Electrical Characteristics of Ultra-Thin Thermally Grown SiO₂ by Selective Anodic Oxidation IEEE Electron Device Lett. Vol.23, no.12 pp.707-709, Dec.2002.

18. M.R.Ravi, Amitava DasGupta and Nandita DasGupta, Effect of Sulfur Passivation and Polyimide Capping on InGaAs/InP PIN Photodetector IEEE Trans. Electron Devices, Vol.50, no.2, 2003.

19. Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M.Kukreja, Effect of Oxygen Pressure and Laser Fluence during Pulsed Laser Deposition of TiO₂ on MTOS (Metal-TiO₂-SiO₂-Si) Capacitor Characteristics, Thin Solid Films, Vol. 462-463C pp. 57-62, 2004.

20. M.R.Ravi, Amitava DasGupta and Nandita DasGupta, Silicon Nitride and Polyimide Capping Layers on InGaAs/InP PIN photodetector after Sulfur Treatment, Jl. Of Crystal Growth, Vol.268, issue 3-4, pp. 359-363, 2004.

21. Guruprasad K.Katti, Nandita DasGupta and Amitava DasGupta, Threshold Voltage Model for Mesa-Isolated Small-Geometry Fully Depleted SOI MOSFETs Based on Analytical solution of 3-D Poissons Equation IEEE Trans. Electron Devices, Vol. 51, No.7, July 2004.

22. Ravneet Singh, Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M. Kukreja, Laser Induced Oxidation for growth of ultrathin gate oxide, Electronics Letters, Vol. 40, No.25, pp.1606-08, Dec. 9, 2004.

23. Vaibhav G. Marathe, Roy Paily, Amitava DasGupta, and Nandita DasGupta, A model to study the effect of selective anodic oxidation on ultrathin gate oxides, accepted for publication in IEEE Trans. Electron Devices.

24. Ravneet Singh, Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M. Kukreja Optimized Dual Temperature Pulsed Laser Deposition of TiO₂ to Realize MTOS (Metal-TiO₂-SiO₂-Si) Capacitors with Ultrathin Gate Dielectric, Semiconductor Sc. & Technol., Vol.20, No.1, Jan. 2005.

25. V.J.Vijaykrishna, S.Vaishnav, Nandita DasGupta and Amitava DasGupta, Unified Analytical Model of HEMTs for Analog and Digital applications IEE Proc. Ckts. Dev. & Sys. Vol. 152, Issue 5, pp.425-432, October 2005.

26. Vaibhav G. Marathe, Yordan Stefanov, Udo Schwalke and Nandita DasGupta, Study of pinholes in Ultrathin SiO₂ by C-AFM Technique Thin Solid Films, Vol.504, Issue1/2, pp. 11-14 May 2006.

27.  Sheela D and Nandita DasGupta, "Optimization of Surface Passivation for InGaAs/InP PIN Photodetectors using Ammonium Sulfide," Semicond. Sci. Technol., vol.23, March 2008 (Article No. 035018).

28. Vaibhav G. Marathe, Naresh Chandani and Nandita DasGupta, Effect of Oxidation Temperature on the Quality and Reliability of Ultrathin Gate Oxide, Thin Solid Films, Vol.504, Issue1/2, pp. 126-128, May 2006.

29. Hrishikesh E. Patel, T. Sundararajan, T. Pradeep, A. Dasgupta,
Nandita Dasgupta and Sarit K. Das, A Micro-convection Model for Thermal Conductivity of Nanofluids, Pramana Journal of Physics Vol.65, No.5, pp.863-879 (2005).

30. Dnaynesh S. Havaldar, Amitava DasGupta and Nandita DasGupta, Study of Dual-Material Gate (DMG) FinFET using Three-Dimensional Numerical Simulation, International Journal of Nanoscience Vol.5, No.3, June 2006.

31. Dnaynesh S. Havaldar, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, Subthreshold current model of FinFETs based on analytical solution of 3-D Poissons equation, IEEE Trans. on Electron Devices, Vol.53, No.4, April 2006.

32. B. Bindu, Nandita DasGupta and Amitava DasGupta, Analytical Model of Drain Current of Strained-Si/Strained-Si_1-YGe_Y/Relaxed-Si_1-XGe_X NMOSFETs and PMOSFETs for Circuit Simulation, Solid-State Electronics, Vol.50, pp. 448-455, 2006.

33. B. Bindu, Nandita DasGupta and Amitava DasGupta, Analytical Model of Drain Current of Si/SiGe Heterostructure p-channel MOSFETs for Circuit Simulation, IEEE Trans. On Electron Devices, Vol. 53, No.6, June 2006.

34. K.Sivakumar, Nandita DasGupta and K.N.Bhat, Sensitivity Enhancement of Polysilicon Piezoresistive Pressure Sensors with Phosphorus Diffused Resistors Journal of Physics: Conference Series, vol. 34, 2006.

36. Binsu Kailath, Nandita Das Gupta and Amitava Das Gupta, IETE Journal of Research, vol. 52, no.5, September-October 2006, pp. 357 363.

37. K.N.Bhat, A.DasGupta, P.R.S.Rao, Nandita DasGupta, Enakshi Bhattacharya, K.Sivakumar, V.Vinoth Kumar, L.Helen Anitha, J.D.Joseph, S.P.Madhavi, and K.Natarajan "Wafer Bonding -A Powerful Technique for MEMS", Indian Journal of Pure and Applied Physics, vol.45, no.4, pp. 311-316, April 2007.

38. B. Bindu, Nandita DasGupta and Amitava DasGupta, A unified model for gate-capacitance voltage characteristics and extraction of parameters of Si/SiGe heterostructure PMOSFETs, IEEE Trans. Electron Devices, vol. 54, pp. 1889 - 1896, August 2007.

39. Binsu J Kailath, Amitava DasGupta, and Nandita DasGupta, IEEE Trans. On Device and Materials Reliability, Dec.2007.

40. Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta, "Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs," IEEE Trans. Electron Devices, vol.55, no.12, pp3418-25, December 2008.

41. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, "Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma," Semicond. Sci. Technol., vol.23, 2008 (Article No. 125019).

42. T.Erlbacher, T Graf, Nandita DasGupta, A. J. Bauer and H.Ryssel, "Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers," Jl. Vac. Sc. Tech. B, vol. 27, pp.482-485, Jan 2009.

43. Rathnamala Rao, Guruprasad Katti, Dnaynesh S. Havaldar, Nandita DasGupta and Amitava DasGupta, "Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs," Solid State Electronics ,v ol 53, issue 3, pp 256-65, March 2009.

44. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, "Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique," Electronics Letters, vol.45, issue 10, pp.527-28, May 2009 .

45. Binsu J Kailath, Amitava DasGupta, Nandita DasGupta, B N Singh and L M Kukreja, Growth of Ultra-thin SiO2 by Laser Induced Oxidation Semiconductor Science & Technol. 24 (2009) 105011.

46. Rupesh Kumar Navalakhe, Nandita DasGupta, and Bijoy Krishna Das, Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform, Appl. Opt. 48, G125-G130 (2009).

47. Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using Analytical Threshold Voltage Model, IEEE Trans. On Device and Materials Reliability,Vol.10, No.2,pp247-253, June 2010.

48. E. Senthil Kumar, Jyotirmoy Chatterjee,N. Rama, Nandita DasGupta and M. S. Ramachandra Rao,A codoping route to realize low resistive and stable p-type conduction in (Li, Ni):ZnO thin films grown by pulsed laser deposition ACS Appl. Materials & Interfaces, Vol. 3, No.6, pp. 1974-79, June 2011

49. K Kalaiselvi, T Sreenidhi, Nandita DasGupta, Heiner Ryssel, and Anton BauerHigh Pressure Oxidation of 4H-SiC in Nitric Acid Vapor, Jpn. J. Appl. Phys. Vol. 50 10PG07, 2011.

50. U. Radhakrishna, A. DasGupta, N. DasGupta, A. Chakravorty, Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback and Self-Heating, IEEE Transactions on Electron Devices, Vol. 58 , Issue 11, pp. 4035–4041, 2011

51. K Kalai Selvi, Nandita DasGupta, Thirunavukkarasu K, Effects of post oxidation annealing on electrical and interface properties of high pressure water vapor oxidized SiO2/SiC Metal-Oxide-Semiconductor Capacitors, Thin Solid Films, Vol.531, pp 373–377, March 15, 2013.

(ii) In National Conferences and Workshops

1. K.N. Bhat, P.R.S. Rao, A.DasGupta, Nandita DasGupta and S.Karmalkar, Micromachining of Silicon, Proc. Seminar on Miniaturisation in Aerospace Systems, pp. BII-1 to BII-26, Hyderabad, Jan.1998..

2.  B. Ganesh Kumar, G. Nalinikanth & Nandita DasGupta, Enhanced & stable photoluminescence in porous silicon by thermal oxidation, Proc. Satellite Symposium of MRSI, IIT Madras, Feb. 1998.

3. S. Rajkumar, I.K.Tejaswi, K.V.S.R. Kishore, V.Naveen Kumar, Amitava DasGupta & Nandita DasGupta, Bulk micromachining of InP substrate for self aligning single mode fibre with InGaAs/InP PIN detector, Proc. COPEN 2000, I.I.T. Madras, pp.315-320, Jan.2000.

4. R. Navin Kumar, S.Kareemulla, A.DasGupta, Nandita DasGupta, P.R.S.Rao and K.N.Bhat, Low temperature pressure assisted silicon bonding for micromechanical applications, Proc. COPEN 2000, I.I.T. Madras, pp.321-326, Jan.2000.

5. Nandita DasGupta, Roy Paily, Amitava DasGupta, Tapas Ganguli, Pankaj Misra, Pijush Bhattacharya and L.M.Kukreja, Pulsed Laser Deposition of TiO2 to realize MTOS (Metal-TiO2-SiO2-Si) capacitor Proc. DAE-BRNS Topical Meeting on Pulsed Laser Deposition (PLD-2001), C.A.T Indore, pp.5-7, Nov.2001.

6. K.N.Bhat, E. Bhattacharya, A.DasGupta, Nandita Dasgupta, P.R.S.Rao, V.Vinoth Kumar, K.Sivakumar, S.R.Manjula, S.P. Madahvi, Y.Sushma, R.J.Daniel, "Silicon Fusion Bonding and SOI Technology for Micromachined Pressure Senaors and Accelerometers", Proceedings (in CD) pp1-9, Natioinal Workshop on MEMS for Aerospace Applications (MEMSPACE-2004), VSSC, ISRO, Trivandrum, January 16-17, 2004.

7. Nandita DasGupta, Ravneet Singh, Roy Paily, Amitava DasGupta, Pankaj Misra and Lalit M. Kukreja, Pulsed Laser Deposition for MOS Gate Dielectric Films (Invited talk) DAE-BRNS 3rd National Symposium on Pulsed Laser Deposition of Thin Films and Nanostructured Materials (PLD-2005), at S. V. University, Tirupati, Nov.6-8, 2005.

8. Nandita DasGupta, Laser Induced Oxidation for MOS Gate Dielectric DAE-BRNS 5^th National Symposium on Pulsed Laser Deposition (PLD-2009), IIT Madras, Nov. 2009.

(iii) In International Conferences and Workshops

1. Nandita Basu & K.N. Bhat, A study of MIS solar cells using high-pressure oxidation technique as a new method of growing thin oxide, 3rd International Workshop on the Physics of Semiconductor Devices, Collected Abstracts, pp.137-139, Madras, Nov.1985.

2. Nandita Basu & K.N. Bhat, Thermal Oxidation of GaAs, Proc. 4th International Workshop on the Physics of Semiconductor Devices, pp.139-141, Dec.1987.

3. K.N. Bhat, P.R.S. Rao & Nandita Basu, MOS studies on Gallium Arsenide using high pressure thermal oxidation, Proc. International Conference and Intensive Tutorial Course on Semiconductor Materials, New Delhi, Dec. 1988.

4. Nandita DasGupta, S. Basu & D.N.Bose, Upgradation of rice-husk silicon for photovoltaic applications, Proc. World Renewable Energy Congress, Reading, U.K., Sept. 1990.

5. S.K.Lahiri, S. Kal, S. Banerjee, D.Das, Nandita DasGupta & P.K.Basu, Photoluminescence and photosensitivity of front surface anodised porous silicon films, Proc. Conference on Emerging Optoelectronic Technologies (CEOT-94), p.42, Bangalore, July 1994.

6. E. Bhattacharya, P. Ramesh & Nandita DasGupta, Effect of hydrogen plasma on porous silicon, Proc. Photonics 96, Madras, Dec. 1996.

7. Deepa Nair J.S., D.Prabhu, P.R.S.Rao, A.DasGupta, S.Karmalkar, Nandita DasGupta & K.N.Bhat, Pressure-assisted fusion bonding of silicon wafers, Proc. SPIEs 1996 Symposium on Smart Materials, Structures & MEMS, vol.3321, pp.248-252,Bangalore, Dec.1996.

8.  B. Ganesh Kumar & Nandita DasGupta, Stable and improved photoluminescence in thermally oxidised porous silicon, Proc. 9th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1997.

9. A. Sudhakar Reddy, P.R.S. Rao, K.N. Bhat & Nandita DasGupta, Lower leakage and higher breakdown voltage for MNOS (Metal-SiN-SiO2-Si) structure, Proc. 10th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec. 1999.

10. V. Naveen Kumar, K.V.S.R. Kishore, P.R.S. Rao, A. DasGupta & Nandita DasGupta, A Passivation study for low dark current InGaAs/InP PIN diode, Proc. 10th International Workshop on Physics of Semiconductor Devices, New Delhi, pp. 617-620, Dec. 1999.

11. A.DasGupta, S. Vaishnav, V. Pradeep Reddy & Nandita DasGupta, A new unified analytical model for I-V characteristics of HEMTs, Proc. 10th International Workshop on Physics of Semiconductor Devices, pp. 467-474, New Delhi, Dec. 1999.

12. Nandita DasGupta, Naveen Kumar V., Kishore K.V.S.R., I.K.Tejaswi, S.Rajkumar and Amitava DasGupta, Passive coupling of InGaAs/InP PIN detector and single mode fibre using InP bulk micromachining, Proc. EOS/SPIE Applied Photonics Symposium, Glasgow, UK, May22-25, 2000.

13.  K.N.Bhat, Nandita DasGupta, A. DasGupta, P.R.S.Rao and R. Navin Kumar, Oxidation Process-Optimization for large area silicon fusion bonded devices and MEMS structures, Proc. The International MEMS Workshop (iMEMS), Singapore, July 4-6, 2001.

14. Guruprasad Katti, N. Lakshmi, Amitava DasGupta and Nandita DasGupta, Analytical threshold voltage model for SOI MOSFET including the potential drop in the SOI substrate, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp. 1312-1315, New Delhi, Dec. 11-15, 2001.

15. Roy Paily, Amitava DasGupta and Nandita DasGupta, Improvement in breakdown field strength of thin thermally grown SiO2 by selective anodic oxidation, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp. 690-694, New Delhi, Dec. 11-15, 2001.

16. Abhijit Das, M.S. Ramachandra Rao and Nandita DasGupta, Ta2O5/SiO2 stacked gate dielectric for silicon MOS devices, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp. 1288-1291, New Delhi, Dec. 11-15, 2001.

17. K.N.Bhat, E.Bhattacharya, A. DasGupta, Nandita DasGupta, B.R.Koti Reddy, P.R.S.Rao and Krishnan Balasubramaniam, Polysilicon Piezoresistive Pressure Sensor using Silicon on Insulator (SOI) approach, Proc. International Conference on Smart Materials, Structures and Systems, pp.798-807, Bangalore, Dec.12-14, 2002

18. K.N. Bhat, C. Yellampalle, Nandita DasGupta, A.DasGupta and P.R.S. Rao, Optimisation of EDP solutions for feature size independent silicon etching, Proc. SPIE Symposium on Micromachining and Microfabrication, vol.4979, San Jose, USA, January 2003.

19. Anand Kumar Illa, Amitava DasGupta and Nandita DasGupta, Analytical Subthreshold Current Modelling of Non-Uniformly doped Small Geometry SOI MOSFETs, Collected Abstracts of International Conference on Materials for Advanced Technologies (ICMAT-2003), p.507, Singapore, December, 2003.

20. Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M.Kukreja, Effect of Low Temperature Buffer Layers during Pulsed Laser Deposition of TiO2 on MTOS (Metal-TiO2-SiO2-Si) Capacitor Characteristics, Proceedings of the 12th International workshop on the Physics of Semiconductor Devices (IWPSD2003), p.480, IIT Madras, December, 2003.

21. Vaibhav G. Marathe, Roy Paily, , , Nandita DasGupta, and Amitava DasGupta Effect of Selective Anodic Oxidation on Electrical Characteristics of MOS capacitors with Ultra-Thin Gate Oxide Grown at Different Temperatures Proceedings of the 12^th International workshop on the Physics of Semiconductor Devices (IWPSD2003), p.483, IIT Madras, December, 2003.

22. S.N.Barik, P.Misra, Rani J.R, A.K.Srivastava, T.A.Khan, Nandita DasGupta, V.P.M.Pillai, R.V.Nandedkar and L.M.Kukreja, Silicon Nanoparticles grown by Pulsed Laser Deposition Proceedings of the 12th International workshop on the Physics of Semiconductor Devices (IWPSD2003), p.1017, IIT Madras, December, 2003.

23. Amitava DasGupta, Roy Paily and Nandita DasGupta, Improvement in Breakdown field strength of thin thermally grown SiO₂ by selective anodic oxidation, (Invited Paper), Proceedings of International Conference on Communications, Devices & Intelligent Systems (CODIS2004), p. 400 - 403, Kolkata, January 2004.

24. Y.Stefanov, R Singh, Nandita DasGupta, P.Misra and U.Schwalke, Conductive Atomic Force Microscopy Study of Leakage Currents through Microscopic Structural Defects in High-k Dielectrics, Proc. Of ECS Satellite Symposium to ESSDERC 2005:
    Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV (DECON 2005), p. 159, September 15-16, 2005, Grenoble, France.

25. B. Bindu, Nandita DasGupta and Amitava DasGupta, Analytical Model of Drain Current of Strained-Si/SiGe/Si p-channel MOSFETs for Circuit Simulation, Proceedings of the 13^th International Workshop on the Physics of Semiconductor Devices (IWPSD2005), pp. 1064-1068, New Delhi, December, 2005.

26. Binsu Kailath, Vaibhav G Marathe, Nandita Das Gupta and Amitava Das Gupta, Chemical oxidation of silicon to grow ultra thin oxide, Proceedings of the 13^th International Workshop on the Physics of Semiconductor Devices (IWPSD2005), New Delhi, December, 2005.

27. Amitava DasGupta, B. Bindu, P.V. Nagaraju, D.S. Havaldar and Nandita DasGupta, Non-classical silicon devices for nano-CMOS technology, International Conference on MEMS and Semiconductor Nanotechnology, IIT Kharagpur, December 2005 (Invited Talk).

28. Binsu J.Kailath, Nandita DasGupta, Amitava DasGupta, S. Bhattacharya, J. McCarthy, B. M. Armstrong, H. S. Gamble, Pankaj Misra and L.M.Kukreja, Electrical Characterization of Al/SiO₂-TiO₂/Strained Si/Relaxed SiGe MTOS Capacitors, International Conference on MEMS and Semiconductor Nanotechnology, IIT Kharagpur, December 2005.

29. K.Sivakumar, Nandita DasGupta and K.N.Bhat, Sensitivity Enhancement of Polysilicon Piezoresistive Pressure Sensors with Phosphorus Diffused Resistors accepted for International MEMS Conference (iMEMS-06), Singapore, May 2006.

30. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta, "Improved reliability characteristics for thermally grown ultra thin gate oxide by optimized anodic oxidation", Proceedings of the Second International Conference on Reliability and Safety Engineering, Dec 18-20, 2006, Chennai, pp 508-514.

31. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta, "Improved Electrical Characteristics of MOS Devices with Ultrathin Gate Oxide Grown by Chemical Oxidation", ECS Transactions - ULSI vs. TFT Conference Volume 8, from the International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, July 29-31, Berga, Italy, 2007.

32. Nandita DasGupta, Novel Oxidation Techniques for Ultrathin SiO₂ suitable for MOS Gate Applications, 10^th International Conference on Advanced Materials (IUMRS-ICAM 2007), 8-13 October, 2007, Bangalore, India (Invited Talk).

33. Binsu J. Kailath, S. Bhattacharya, Amitava DasGupta, Nandita DasGupta, D.W. McNeill and H.Gamble , Effect of Nitridation on Al/HfO₂/Ge MIS Capacitors, pp. 194-197, 14th International workshop on the Physics of Semiconductor Devices (IWPSD2007), Mumbai, December 2007.

34. T. Sreenidhi, Nandita DasGupta and K.Baskar, Study of Reactive Ion Etching of GaN using SF6+ N2/Ar Plasma, pp. 399-402, 14th International workshop on the Physics of Semiconductor Devices (IWPSD2007), Mumbai, December 2007.

35. Binsu J.Kailath, Amitava DasGupta, Nandita DasGupta, S Bhattacharya, B. M.Armstrong, H. S. Gamble and J McCarthy, Novel low temperature techniques for growth of ultrathin oxides for Strained Si MOS Devices, pp. 429 432, IEEE International conference on Microelectronics (ICM 2007) Cairo, Egypt, December 2007.

36. Dnyanesh S. Havaldar, Guruprasad Katti, B. M. Jadeja, Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, Performance Enhancement in Asymmetric Gate Dielectric MOSFET, pp. 417 420, IEEE International conference on Microelectronics (ICM 2007) Cairo, Egypt, December 2007.

37. Nandita DasGupta and M.R.Ravi, Surface Passivation of InGaAs/InP Photodetectors to reduce dark current Proceedings of International Conference on Communications, Devices & Intelligent Systems (CODIS2004), p.268, Kolkata, January 2004.

38. Sachin Narwade and Nandita DasGupta, Process Optimization for a Transimpedance Pre-amplifier using Self-aligned GaAs MESFETs on epitaxial wafers, Proc. International Conference on Emerging Trends in Engineering & Technology, Nagpur, pp. 439-442, July 2008.

39. R. Navalakhe, Nandita DasGupta and B. K. Das, Fabrication and Characterization of Single Mode Optical Waveguide in Silicon-On-Insulator, PHOTONICS-2008: International Conference on Fiber Optics and Photonics, December 13-17, 2008, IIT Delhi, India.

40. R. Navalakhe, Nandita DasGupta and B. K. Das, Design of Low-Loss Compact 90o Bend Optical Waveguide for Photonic Circuit Applications in SOI Platform, Third IEEE International Conference on Industrial and Information Systems, December 8-10, 2008, IIT Kharagpur, India.

41. Rathnamala Rao, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, Study of random Dopant fluctuation effects in fully depleted silicon on Insulator MOSFET using analytical model, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

42. Lekshmi T, Amit Kumar Mittal, Amitava DasGupta, Anjan Chakravorty and Nandita DasGupta, Compact Modeling of SOI-LDMOS including quasi-saturation effect, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

43. T. Sreenidhi, Amitava DasGupta and Nandita DasGupta, Thermally Oxidized LPCVD Silicon as Gate Dielectric on GaN, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

44. Binsu J Kailath, Amitava DasGupta and Nandita DasGupta, Ultra thin Oxide by Chemical Vapour Oxidation of Si II International Conference on Semiconductor Technology for Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Xi'an, China, July 5-10, 2009.

45. Kalaiselvi K, Binsu J. Kailath, Amitava DasGupta, and Nandita DasGupta, Ultrathin Gate Oxide by RTO followed by Anodization, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009.

46. J. Chatterjee, T. Sreenidhi, K. Baskar, Amitava DasGupta, and Nandita DasGupta, Fabrication and Characterization of InGaN/GaN MQW Blue LED, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009.

47. Nandita DasGupta, Some Challenges in the Fabrication of GaN-based Devices, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009 (Invited Talk).

48. Bijoy .K. Das, John P George and Nandita DasGupta, Compact integrated optical directional coupler with large cross section silicon waveguides SPIE Photonics Europe, Brussels, April 2010.

49. E. Senthil Kumar, Jyothirmoy Chaterjee, Shubra Singh, Nandita Dasgupta and M. S. Ramachandra Rao Thin film growth,electrical transport and ohmic contact studies of p-ZnO, Proc. TENCON 2010, pp.995-7 978-1-4244-6890-4/10$26.00 ©2010 IEEE at Fukuoka, Japan, November 22-24, 2010 , .

50. K. Kalai Selvi, T Sreenidhi, Nandita DasGupta, Heiner Ryssel and Anton Bauer, High Pressure Chemical Vapor Oxidation of Silicon Carbide, presented in 2011 International Workshop on Dielectric Thin Films For Future Ulsi Devices: Science And Technology" (IWDTF-11), Tokyo Institute of Technology, Tokyo, Japan) January 20-21, 2011., .

51. K. Kalai Selvi, T Sreenidhi and Nandita DasGupta, Electrical and reliability characteristics of oxide grown by High Pressure Oxidation of SiC in nitric acid vapor with different gas ambient” presented in 16th International workshop on the Physics of Semiconductor Devices (IWPSD2011), Kanpur, December 2011 and won the “Best Poster” award., .

52. T. Sreenidhi, Jyotirmoy Chatterjee, Amitava DasGupta and Nandita DasGupta, Optimization of Ohmic Contact for the Fabrication of InGaN/GaN MQW Blue LED, presented in 16th International workshop on the Physics of Semiconductor Devices (IWPSD2011), Kanpur, December 2011, .

53. V Gowri Suresh, Nandita DasGupta, Shanti Bhattacharya,Tunable MEMS Diffraction Grating, presented in 16th International workshop on the Physics of Semiconductor Devices (IWPSD2011), Kanpur, December 2011., .

54. Naveen, T.Sreenidhi, Nandita DasGupta and Amitava DasGupta,An Analytical Charge Control Model for AlGaN/GaN HEMT including the Gate bias dependence on Polarization Charge accepted for oral presentation in the 1st International Conference on Emerging Electronics 2012 (ICEE 2012) to be held in IIT Bombay, Mumbai., .

55. Sreenidhi T., Amitava DasGupta and Nandita DasGupta Temperature and Bias Dependent Gate Leakage in AlInN/GaN High Electron Mobility Transistor” accepted for poster presentation in the 1st International Conference on Emerging Electronics 2012 (ICEE 2012), IIT Bombay, Mumbai., .

56. P. Sakthivel, Nandita Dasgupta and B.K Das, Simulation and experimental studies of diffusion doped p-i-n structures for silicon photonics, Oral presentation in Silicon Photonics VIII - SPIE OPTO, February 2013 in San Francisco, California USA., .

57. Gowri Suresh Vesalapu, Shanti Bhattacharya and Nandita Dasgupta, Tunable MEMS Diffraction Gratings with Improved Displacement Profile of Fixed-Fixed Beams, SPIE Photonics West 2013, San Francisco, California, USA, February 2013, .