|
Title of the
Project
|
Duration of the
Project
|
Sponsoring Agency
|
Value of the
Project in Rs. (lakhs)
|
Co-investigators
|
|
Fabrication of InGaAs/InP PIN photodetector for
operation at 1.3mm
|
2 years starting
Aug.1998
|
RCI, Hyderabad
|
19.55
|
Dr.A.DasGupta
Prof. K.N.Bhat
|
|
Pulsed laser deposition of high-K dielectric films for MOS
devices
|
3 years starting Jan. 2003
|
DAE – BRNS, Mumbai
|
14.17
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Novel oxidation techniques for improvement in the
electrical properties of ultra-thin SiO2 for VLSI Technology
|
3 years starting June 2006
|
DST
|
72.00
|
Prof.A.DasGupta
|
|
Design and fabrication of AlGaN/GaN MISHEMT and field plated HEMT for RF power amplifier applications
|
3 years starting Oct. 2011
|
DST
|
38.88
|
Prof.A.DasGupta
|
|
Centre for NEMS and Nanophotonics
|
5 years starting March 2011
|
DIT
|
4946.50
|
Prof. E. Bhattacharya and others
|
|
Title of the
Project
|
Duration of the
Project
|
Sponsoring Agency
|
Value of the
Project in Rs. (lakhs)
|
Principal
Investigator
|
|
Development of GaAs based MESFET
& HEMT logic circuits
|
2 years starting Apr. 1994
|
AICTE, New Delhi
|
10.00
|
Prof. K.N.Bhat
Dr. A.DasGupta
Mr. P.R.S.Rao
|
|
Design & Development of Micromachined
Silicon Accelerometer
|
16 months starting May 1995
|
DRDO, New Delhi
|
24.00
|
Prof. K.N.Bhat and 10 others
|
|
Development of micro-machined smart sensors for mechanical
and biomedical applications
|
2 years starting March 1995
|
AICTE, New Delhi
|
20.00
|
Prof. K.N.Bhat and 10 others
|
|
Flightworthy Micromachined
Seismic Accelerometer
|
21 months starting May 1997
|
DRDO, New Delhi
|
17.25
|
Prof. K.N.Bhat and 6 others
|
|
Development of SOI CMOS IC process for space applications
|
2½ years starting Jan.1998
|
ISRO, Bangalore
|
12.00
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Design and Development of Mask and Process Techno-logy for
PIN photodiodes with low dark current
|
Oct.1998 to
June 1999
|
DRDL, Hyderabad
|
4.95
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Development of PIN photo-diodes with low dark current for
scintillation detection
|
Feb. 1999 to
Nov. 2001
|
DRDO, New Delhi
|
49.50
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Development of Reliable Seismic Microaccelerometer
|
April 2000 to June 2002
|
RCI, Hyderabad
|
4.95
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Development of Silicon PIN photodiodes for detecting He-Ne
laser signal
|
2 years starting July 2001
|
ELOIRA, Hyderabad
|
14.50
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Study of stiction in microelectromechanical systems
|
3 years starting Sept. 2001
|
DRDO, New Delhi
|
20.42
|
Dr.E.Bhattacharya
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Development of MOS Integrated Pressure Sensor
|
2 years starting Sept. 2001
|
NPSM, DRDO, New Delhi
|
232.10
|
Prof. K.N.Bhat
Dr.E.Bhattacharya
Dr.A.DasGupta
Mr.P.R.S.Rao
Prof.K.Balasubramaniam
|
|
Fundamental studies on thermal properties of nano-fluids
|
3 years starting Jan. 2003
|
DRDO, New Delhi
|
19.00
|
Dr. S.K. Das
Prof. T. Sundararajan
Dr. A.DasGupta
Dr. T. Pradeep
|
|
Design and Fabrication of silicon micropump
for drug delivery and dosage control
|
2 years starting March 2004
|
NPSM, DRDO, New Delhi
|
259.60
|
Prof. K.N.Bhat
Dr.E.Bhattacharya
Dr.A.DasGupta
Dr. S. Karmalkar
Mr.P.R.S.Rao
Dr. K. Gopinath
Dr. M. Singaperumal
Dr. V.Balasubramaniam
|
|
Development of MEMS based microvalve
|
2 years starting September 2005
|
ISRO
|
43.20
|
Prof. M. Singaperumal
Dr.A DasGupta
|
|
Title of the
Project
|
Duration of the
Project
|
Sponsoring Agency
|
Value of the
Project in Rs. (lakhs)
|
Co-investigators
|
|
Indigenous development of silicon photodetectors
|
April 2003 -April 2004
|
IISU, Trivandrum
|
12.00
|
Dr.A.DasGupta
Prof. K.N.Bhat
Mr.P.R.S.Rao
|
|
Technology transfer and prototype production of silicon
PIN photodiodes for detecting He-Ne laser signal
|
June 2003 - Dec. 2003
|
ELOIRA, Hyderabad
|
3.00
|
Dr.A.DasGupta
Prof. K.N.Bhat
Mr.P.R.S.Rao
|
|
Surface characterization of transparent ceramic samples
|
Aug 2003 - June 2004
|
John F. Welch Technology Centre, GE India, Bangalore
|
0.50
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
|
|
Testing and characterization of silicon devices and
microstructures
|
March 2005 - December 2005
|
John F. Welch Technology Centre, GE India, Bangalore
|
4.00
|
Prof. K.N.Bhat
Dr.A.DasGupta
Mr.P.R.S.Rao
Dr.E.Bhattacharya
|
