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Journal Publications

Device Modeling and Simulation

  1. B. Prasannanjaneyulu, D. S. Rawal and S. KARMALKAR, Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements, Semiconductor Science and Technology, vol. 37, no. 4, p. 065014, Apr. 2022.
  2. K. Akshay and S. KARMALKAR, Optimum Aspect Ratio of Superjunction Pillars Considering Charge Imbalance, IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1798 - 1803, Apr. 2021.
  3. Anvar A and S. KARMALKAR, Edge effects on the contact resistance of side-bonded contacts to heavily n-doped silicon nanowires, Physica E, vol.130, p. 114669, Jan. 2021.
  4. K. Akshay and S. KARMALKAR, Improved Theoretical Minimum of the Specific On-Resistance of a Superjunction, Semiconductor Science and Technology, vol. 36, no. 1, p. 015021, Dec. 2020.
  5. K. Akshay and S. KARMALKAR, Note Clarifying the Paper, “Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design”, IEEE Journal of the Electron Devices Society, vol. 8, pp. 1315 - 1316, Oct. 2020.
  6. K. Akshay and S. KARMALKAR, Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design, IEEE Journal of the Electron Devices Society, vol. 8, pp. 1129 - 1137, Sep. 2020.
  7. K. Akshay and S. KARMALKAR, Quick Design of a Superjunction Considering Charge Imbalance Due to Process Variations, IEEE Transactions on Electron Devices, vol. 67, no. 8, pp. 3024-3029, Aug. 2020.
  8. B. Prasannanjaneyulu, and S. KARMALKAR, Relative effectiveness of high-k passivation and gate-connected field plate techniques in enhancing GaN HEMT breakdown, Microelectronics Reliability, vol. 110, no. 113698, pp. 1 – 6, Jul. 2020. 
  9. D. Pradeep, S. Bhattacharya and S. KARMALKAR, Augmentation and Assessment of a Universal FET I–V Model for Simulating GaN HEMTs, IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 847 – 854, Mar. 2020.
  10. B. Prasannanjaneyulu, S. Mishra and S. KARMALKAR, Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions, IEEE Transactions on Device and Materials Reliability, vol. 19, no. 4, pp. 766 – 773, Dec. 2019.
  11. B. Prasannanjaneyulu, S. Bhattacharya, and S. KARMALKAR, Mechanism and enhancement of the near-threshold low off-state breakdown voltage in gallium nitride high electron mobility transistors, Jap. J. Appl. Phys., vol. 58, pp. SCCD01-1-SCCD01-6, Apr. 2019. 
  12. M. G. Jaikumar, K. Akshay, and S. KARMALKAR, An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs, Solid-State Electron., vol. 156, pp. 73-78, Mar. 2019.
  13. Anvar A. and S. KARMALKAR, Operating regimes and contact resistance of side-bonded contacts to thin heavily doped semiconductor nanowires, J. Appl. Phys., vol. 124, no. 18, pp. 184502.1-184502.7, Nov. 2018.
  14. Anvar A. and S. KARMALKAR, Space-charge and current non-uniformities, and contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires, J. Appl. Phys., vol. 124, no. 8, pp. 084502.1-084502.13, Aug. 2018.
  15. V. K. Gurugubelli and S. KARMALKAR, An Integral Equation Approach to Model the Drastic Change in Depletion Width From Bulk to Nanoscale Junctions, IEEE Transactions on Electron Devices, vol. 65, no. 4, pp. 507 – 514, Apr. 2018.
  16. Anvar A. and S. KARMALKAR, Doping dependence of the contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires, J. Appl. Phys., vol. 122, no. 21, pp. 214501.1-214501.8, Dec. 2017.
  17. V. K. Gurugubelli and S. KARMALKAR, Effective medium theory based analytical models for the potential and field 2 distributions in arrays of nanoscale junctions, J. Appl. Phys., vol. 122, no. 2, pp. 024502.1-024502.11, Jul. 2017.
  18. D. Pradeep, D. S. Rawal, and S. KARMALKAR, Comparison of Two DC Extraction Methods for Mobility and Parasitic Resistances in a HEMT, IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1528-1534, Apr. 2017.
  19. Shubham Jain, V. K. Gurugubelli and S. KARMALKAR, An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions, IEEE Transactions on Electron Devices, vol. 64, no. 2, pp. 507 – 514, Feb. 2017.
  20. D. Pradeep, Amit and S. KARMALKAR, DC Extraction of Gate Bias Dependent Parasitic Resistances and Channel Mobility in a HEMT, IEEE Electron Device Lett., vol. 37, no. 11, pp. 1403-1406, Nov. 2016.
  21. V. K. Gurugubelli and S. KARMALKAR, Effective medium theory of the space-charge region electrostatics of arrays of nanoscale junctions, J. Appl. Phys., vol. 119, no. 2, pp. 024507.1-024507.12, Jan. 2016.
  22. M. G. Jaikumar, R. Ramakrishna Rao, and S. KARMALKAR, On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs, Solid-State Electron., vol. 114, pp. 49-54, Dec. 2015.
  23. V. K. Gurugubelli and S. KARMALKAR, Analytical Theory of the Space-Charge Region of Lateral p-n Junctions in Nanofilms, J. Appl. Phys., vol. 118, no. 3, pp. 034503.1-034503.10, Jul. 2015.
  24. V. K. Gurugubelli, Rekha C. Thomas and S. KARMALKAR, An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions, IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 471-477, Feb. 2015.
  25. V. K. Gurugubelli and S. KARMALKAR, A Unified Analytical Model of the Junction Electrostatics in Nanowire and Nanotube Arrays, Appl. Phys. Lett., vol. 104, p. 203502, May 2014.
  26. Arvind Ajoy, S. E. Laux, Kota V.R.M. Murali and S. KARMALKAR, Multiscale model for phonon-assisted in band-to-band tunneling in semiconductors, J. Appl. Phys., vol. 113, no. 6, pp. 064506.1-064506.9, Feb. 2013.
  27. Saleem Haneefa and S. KARMALKAR, A Closed-form Model for the Open Circuit Voltage of Solar Cells with Shunt Resistance, Bias Dependent Photocurrent and Double Exponential Terms, IET Proc. – Circuits, Devices and Systems, vol. 6, no. 4, pp. 211-217, Jul. 2012.
  28. Komail Badami and S. KARMALKAR, A Quasi-static Compact Model for Coupling between Aligned Contacts on Finite Substrates with Insulating / Conducting Backplanes, IEEE Trans. Computer Aided Design of Integrated Circuits and Systems, vol. 31, no. 6, pp. 858-867, Jun. 2012.
  29. Arvind Ajoy, Kota V.R.M. Murali and S. KARMALKAR, Brillouin Zone unfolding of Complex Bands in a nearest neighbour tight binding scheme, J. Phys.: Condens. Matter., vol. 24, no. 5, pp. 055504, Feb. 2012.
  30. K. R. K. Maheswaran and S. KARMALKAR, Effect of the ambient field on the I-V characteristics of nanowire resistors and junctions - A simulation study, Physica E, vol. 44, pp. 700-707, Nov. 2011.
  31. A. K. Das and S. KARMALKAR, Analytical Derivation of the Closed-Form Power Law J-V Model of an Illuminated Solar Cell From the Physics Based Implicit Model, IEEE Trans. Electron Devices, vol. 58, no. 4, pp. 1176-1181, Apr. 2011.
  32. S. KARMALKAR and H. Saleem, The power law J-V model of an illuminated solar cell, Sol. Energy Mater. Sol. Cells, vol. 95, no. 4, pp. 1076-1084, Apr. 2011.
  33. S. KARMALKAR, K. R. K. Maheswaran and V. Gurugubelli, Ambient field effects on the current-voltage characteristics of nanowire field effect transistors, Appl. Phys. Lett., vol. 98, no. 6, pp. 063508, Feb. 2011.
  34. Arvind Ajoy and S. KARMALKAR, On a simple scheme for computing the electronic energy levels of a finite system from those of the corresponding infinite system, J. Phys.: Condens. Matter., vol. 22, no. 43, pp. 435502, Oct. 2010.
  35. S. Sudharsanan and S. KARMALKAR, Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors, J. Appl. Phys., vol. 107, pp. 064501, Mar. 2010.
  36. Saleem H. and S. KARMALKAR, An analytical method to extract the physical parameters of a solar cell from four points on the illuminated J-V curve, IEEE Electron Device Lett., vol. 30, No. 4, pp. 349-352, Apr. 2009.
  37. S. Srikanth and S. KARMALKAR, On the Charge Sheet Superjunction (CSSJ) MOSFET, IEEE Trans. Electron Devices, vol. 55, No. 12, pp. 3562-3568, Dec. 2008.
  38. S. KARMALKAR and Saleem H., A physically based explicit I-V model of a solar cell for simple design calculations, IEEE Electron Device Lett., vol. 29, No. 5, pp. 449-451, May 2008.
  39. D. Mahaveer Sathaiya and S. KARMALKAR, A Closed-form Model for Thermionic-trap-assisted Tunneling, IEEE Trans. Electron Devices, vol. 55, no.2 , pp.557-564, Feb. 2008.
  40. S. Balaji and S. KARMALKAR, Improving the Performance of Superjunction Devices having Fixed Charge in Isolation and Termination Oxide Layers, IEEE Trans. Electron Devices, vol. 55, no.1, pp. 446-451, Jan. 2008.
  41. D. Mahaveer Sathaiya and S. KARMALKAR, Edge Effects on Gate Tunneling Current in HEMTs, IEEE Trans. Electron Devices, vol. 54, no.10, Oct. 2007.
  42. S. KARMALKAR, Vishnu Mohan P., Hari P. Nair and Y. Ramya, Compact Models of Spreading Resistances for Electrical / Thermal Design of Devices and ICs, IEEE Trans. Electron Devices, vol. 54, no. 7, pp. 1437-1743, Jul. 2007.
  43. D. Mahaveer Sathaiya and S. KARMALKAR, A model for the high field leakage current in nitrided oxides, J. Appl. Phys., vol. 101, pp. 106104, May 2007.
  44. S. Balaji and S. KARMALKAR, Effects of Oxide Fixed Charge on the Breakdown Voltage of Superjunction Devices, IEEE Electron Device Lett., vol. 28, No. 3, pp. 229-231, Mar. 2007.
  45. S. KARMALAKAR and N. Soudabi, A Closed - form Model of the Channel Electric Field Under the Field Plate in a HEMT, IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2430-2437, Oct. 2006.
  46. D. Mahaveer Sathaiya and S. KARMALKAR, Thermionic Trap - Assisted Tunneling model and its application to leakage current in nitrided oxides and AlGaN / GaN HEMTs , J. Appl. Phys., vol. 99, 093701, May 2006.
  47. S. KARMALKAR, Naresh Satyan and D. Mahaveer Sathaiya, On Resolution of the Mechanism for Reverse Gate Leakage in AlGaN / GaN HEMTs , IEEE Electron Device Lett., vol. 28, pp. 87-89, Feb. 2006.
  48. S. KARMALKAR, Vishnu Mohan P. and Presenna Kumar, A Unified Compact Model of Electrical and Thermal 3-D Spreading Resistance Between Eccentric Rectangular and Circular Contacts , IEEE Electron Device Lett., vol. 26, no. 12, pp. 909-912, Dec. 2005.
  49. S. KARMALAKAR, Michael S. Shur, Grigory Simin and M. Asif Khan, Field-Plate Engineering for Heterostructure Field Effect Transistors , IEEE Trans. Electron Devices,vol. 52, no. 12, pp. 2534-2540, Dec. 2005.
  50. S. KARMALKAR, D. Mahaveer Sathaiya and Michael Shur, Mechanism of the Reverse Gate Leakage in AlGaN / GaN HEMTs, Appl. Phys. Lett., vol. 82, pp. 3976, Jun. 2003.
  51. S. KARMALKAR, On the Bipolar Transistor Collector Current at the Onset of Base - widening as a Function of the Collector - base Voltage , Solid State Electron, vol. 47, pp.951-955, Jun. 2003.
  52. S. KARMALKAR and D. Mahaveer Sathaiya, Unified Closed-form Model of Thermionic-field and Field Emissions through a Triangular Potential Barrier, Appl. Phys. Lett., vol. 82, pp. 1431, Mar. 2003.
  53. S. KARMALKAR and A. Sharat Chandra, High Frequency BJT: Modeling, and Parameter Extraction from Simple Measurements on Finished Devices , Solid State Electron., vol. 47,pp.131-141, Jan. 2003.
  54. S. KARMALKAR and Umesh Mishra, Very high voltage AlGaN / GaN HEMTs using a field-plate deposited on a stepped insulator , Solid-State Electron., vol. 45, pp.1645-1652, Sep. 2001.
  55. S. KARMALKAR, J. Deng, M. S. Shur and R. Gaska, RESURF AlGaN / GaN HEMT for very high voltage power switching , IEEE Electron Device Lett., vol. 22, pp. 373-375, Aug. 2001.
  56. S. KARMALKAR and Umesh Mishra, Enhancement of Breakdown Voltage in AlGaN / GaN High Electron Mobility Transistors Using A Field Plate , IEEE Trans. Electron Devices, vol. 48, pp.1515-1521, Aug. 2001.
  57. S. KARMALKAR and R. Ramakrishna Rao, A simple yet comprehensive unified physical model of the donor layer electrons in delta-doped and uniformly doped high electron mobility transistors , IEEE Trans. Electron Devices, vol. 47, pp. 667-676, Apr. 2000.
  58. S. KARMALKAR and Girish R., A simple yet comprehensive unified physical model of the 2-dimensional electron gas in delta-doped and uniformly doped high electron mobility transistors , IEEE Trans. Electron Devices, vol. 47, pp. 11-23, Jan. 2000.
  59. S. Ramakrishna and S. KARMALKAR, HEMT modeling using semi-physical expressions for the equilibrium space-charge parameters of the modulation doped heterojunction , IEE Proceedings on Circuits Devices and Systems, vol. 146, pp. 211-214, Aug. 1999.
  60. S. KARMALKAR, A unified equilibrium treatment of modulation doped hetero-junctions and grossly asymmetric homojunctions, and its application to MODFET design , IEEE Trans. Electron Devices, vol. 45, pp. 2187-2195, Oct. 1998.
  61. S. KARMALKAR, A new equivalent MOSFET representation of a HEMT to analytically model non-linear charge control for simulation of HEMT devices and circuits , IEEE Trans. Electron Devices, vol. 44, pp. 862-868, May 1997.
  62. S. KARMALKAR and K. N. Bhat, The shifted rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs , Solid-State Electron., vol. 34, pp. 681-692, Jul. 1991
  63. S. KARMALKAR and K. N. Bhat, A three terminal remote base biasing scheme of the thyristor for three terminal measurement of base parameters , Solid-State Electron. , vol. 34, pp. 613-616, Jul. 1991.
  64. S. KARMALKAR and K. N. Bhat, A process parameter based circuit simulation model for ion-implanted MOSFETs and MESFETs , IEEE J. of Solid-State Circuits, vol. 24, pp.139-145, Feb. 1989.
  65. S. KARMALKAR and K. N. Bhat, A simple C-V method to extract the correct equivalent box and Gaussian representations of the doping profile and flat band voltage in BC MOSFETs , Solid-State Electron., vol. 31, pp.1567-1571, Nov. 1988.
  66. S. KARMALKAR and K. N. Bhat, The correct equivalent box representation for the buried layer of BC MOSFETs in terms of implantation parameters , IEEE Electron Device Lett., vol. 8, pp. 457 - 459, Oct. 1987.

Device / MEMS Fabrication

  1. P. V. M. Ramanamurthy, R. Ahrens, S. KARMALKAR, Piezoelectric Microvalve , Indian J. of Pure and Appl. Phys., vol. 45, no. 4, pp. 278-281, April 2007.
  2. S. KARMALKAR and Pradeep Kumar, Effects of Nickel and Palladium Activations on the Adhesion and I-V Characteristics of as-plated Electroless Nickel Deposits on Polished Crystalline Silicon , J. Electrochem. Soc. , vol. 151, pp. 554-558, September 2004.
  3. V. Pradeep Kumar and S. KARMALKAR, Study of electroless nickel on polished silicon for MEMS applications , Int. J. of Comp. Eng. Sci., vol. 4, no. 3, pp. 505-508, September 2003.
  4. S. KARMALKAR, J. Bannerjee and K. R. K. Rao, An improved procedure for bump plating of planar diodes , J. Mater. Process. Technol., vol. 134, no. 2, pp. 210-213, March 2003.
  5. S. KARMALKAR, Roji Marjori and V. G. Sumithra, Adhesion of Electroless Nickel Plating on Polished silicon , J. Adhesion Sci. Technol. vol. 16 , no. 11, pp. 1501-1507, 2002.
  6. S. KARMALKAR, N. Venkatsubramaniam, and Stimit Oak, DC and periodic reverse electroplating of Semiconductor Surfaces Having Adjacent P-type and N-type Areas , J. Electrochem. Soc., vol. 149, pp. C429-C431, August 2002.
  7. S. KARMALKAR and J. Banerjee, A study of immersion processes of activating polished crystalline silicon for autocatalytic electroless deposition of palladium and other metals , J. Electrochem. Soc., vol. 146, pp. 580-584, February 1999.
  8. S. KARMALKAR, D. Sridhar and J. Banerjee, A novel activation process for autocatalytic electroless deposition on silicon substrates , J. Electrochem. Soc., vol. 144, pp. 1696-1698, May 1997.
  9. Balaji Suresh, Satish Kumar, S. KARMALKAR and Enakshi Bhattacharya, Electroless nickel plated contacts to hydrogenated amorphous silicon , Thin Solid Films, vol. 252, pp. 78-81, 1994.

Education

  1. S. KARMALAKAR, Introducing the Device Modeling Procedure to Electrical Engineering Students , IEEE Trans. Education, vol. 50, no. 2, pp.137-142, May 2007.
  2. S. KARMALKAR, Simple unified elucidations of some semiconductor device phenomena , IEEE Trans. Education, vol. 42, pp. 323-327, November 1999.
  3. S. KARMALKAR, Appealing analogies for aiding student's assimilation of some key physical concepts related to semiconductor devices , IEEE Trans. Education, vol. 42, pp. 328-330, November 1999.

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Patents

  1. S. KARMALKAR and D. Sridhar, An apparatus for maintaining steady plating current in pulse electroplating applications , Indian Patent #188558 (sealed on 18th July 2003).
  2. S. KARMALKAR and D. Sridhar, A process for obtaining a silicon substrate with uniform and adherent deposit of palladium or other metal thereon by electroless plating , Indian Patent #188631 (sealed on 1st Aug 2003).
  3. S. KARMALKAR and D. Sridhar, A method of electroplating metal contacts on a P+N semiconductor diode substrate and an apparatus for carrying out the said method , Indian Patent # 188350 (sealed on 1st Aug 2003).

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Book Chapters

  1. S. KARMALKAR, M. S. Shur and R. Gaska, GaN-based Power High Electron Mobility Transistors , Chapter 3 in Wide Energy Bandgap Electronic Devices (pp. 175-218), edited by Fan Ren, World Scientific (2003).
  2. S. KARMALKAR, A Course for Fostering Research Spirit, in Collection of papers by distinguished academics and professionals, brought out by Indian Society for Technical Education, (2011).

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Video Lectures

 

1.     Solid State Devices, hosted on NPTEL and YouTube.

2.     Semiconductor Device Modeling, hosted on NPTEL and YouTube.

3.     Introduction to Research, hosted on YouTube.

4.     Follow no one, but learn from everyone, and acknowledge it too, hosted on YouTube.

 

 

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Journal Publications
     Device Modeling and Simulation
     Device / MEMS fabrication
     Education

Patents

Book Chapters

Video Lectures

© Karmalkar, 4 May 2022