Published Journals


2019
  • Prashanth Kumar Manda, Logesh Karunakaran, Sandeep Thirumala, Anjan Chakravorty,and Soumya Dutta, “Modeling of Organic Metal-Insulator-Semiconductor Capacitor”, IEEE Transactions on Electron Devices, Accepted.
  • J. Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, “A Scalable, Broadband and Physics Based Model for On-Chip Rectangular Spiral Inductors”, IEEE Transaction on Magnetics, Accepted.
  • J. Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, “A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations”, IEEE Transactions on Electron Devices, Vol. 66, No. 1, pp. 802-805, 2019.

2018
  • J. Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, “Compact Modeling of Proximity Effect in High- Q Tapered Spiral Inductors”, IEEE Electron Device Letters, pp. 588-590, 2018. (citation: 3) (Impact Factor: 3.753)
  • Nikhil K, Nandita DasGupta, Amitava DasGupta, Anjan Chakravorty, “SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications”, IEEE Transactions on Electron Devices, Vol. 63, No. 10, pp. 4931-4937, 2018. (citation: 1) (Impact Factor: 2.207)

2017
  • S Yadav, A. Chakravorty, “A Pragmatic Approach to Modeling Self-Heating Effects in SiGeHBTs”, IEEE Transactions on Electron Devices, 64 (12), pp. 4844-4849, 2017. (citation: 2)(Impact Factor: 2.207)
  • S Balanethiram, A. Chakravorty, R D’Esposito, S Fregonese, D Céli,, Thomas Zimmer, “Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average ThermalConductivity”, IEEE Transactions on Electron Devices, 64 (9), 3955-3960, 2017. (citation: 6) (Impact Factor: 2.207).
  • Suresh Balanethiram, Rosario D'Esposito, Anjan Chakravorty, SebastienFregonese, Didier Céli, Thomas Zimmer, “Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs”, IEEE Transactions on Electron Devices, accepted, DOI: 10.1109/TED.2016.2645615, 2017.
  • C Mukherjee, T Jacquet, A. Chakravorty, T Zimmer, J Boeck, K Aufinger, C Maneux, “Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit”, Microelectronics Reliability”, 73, 146-152, 2017. (citation: 2) (Impact Factor: 1.483)
  • “Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit”, Microelectronics Reliability”, 73, 146-152, 2017. (citation: 2) (Impact Factor: 1.483)

2016
  • Anjan Chakravorty, Rosario D'Esposito, Suresh Balanethiram, Sébastien Frégonèse; Thomas Zimmer, “Analytic Estimation of Thermal Resistance in HBTs”, IEEE Transactions on Electron Devices, Vol. 63, No. 8, pp. 2994 - 2998, 2016.
  • KrishnanNadar Savithry Nikhil, Nandita DasGupta, Amitava DasGupta, Anjan Chakravorty, “Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors”, IEEE Transactions on Electron Devices, Vol. 63, No. 10, pp. 4003-4010, 2016.
  • Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Böck, Klaus Aufinger, Cristell Maneux, ”Low-Frequency Noise in Advanced SiGe:C HBTs Part I: Analysis”, IEEE Transactions on Electron Devices, Vol. 63, No. 9, pp. 3649 - 3656, 2016.
  • Shon Yadav, Anjan Chakravorty, Michael Schroter, “Modeling of the Lateral Emitter Current Crowding Effect in SiGe HBTs”, IEEE Transactions on Electron Devices, Vol. 63, No. 11, pp. 4160 - 4166, 2016.
  • Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Böck, Klaus Aufinger, Cristell Maneux, “Low-Frequency Noise in Advanced SiGe:C HBTs-Part II: Correlation and Modeling”, IEEE Transactions on Electron Devices, Vol. 63, No. 9, pp. 3657 - 3662, 2016.
  • A.D.D. Dwivedi, AnjanChakravorty, Rosario D’Esposito, Amit Kumar Sahoo, SebastienFregonese, Thomas Zimmer, “Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition”, Solid-State Electronics, Volume 115, pp. 1-6, 2016
  • Rosario D’Esposito, Sébastien Frégonèse, Anjan Chakravorty, Pascal Chevalier, Didier Céli, Thomas Zimmer, “Innovative SiGe HBT Topologies With Improved Electrothermal Behavior”, IEEE Transactions on Electron Devices, Volume: 63, Issue: 7, pp. 2677 - 2683, 2016.

2015
  • K. Kumar, A. Chakravorty, G.G. Fischer, C. Wipf, “Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs", IEEE Trans. Electron Devices, Vol. 62, Issue: 8, pp. 2384 – 2389, 2015.
  • Z. Huszka, A. Chakravorty, “Correlated noise in bipolar transistors: Model implementation issues”, Solid-State Electronics, Vol. 114, pp. 69-75, 2015.
  • T. Jacquet, G. Sasso, A. Chakravorty, N. Rinaldi, K. Aufinger, T. Zimmer, V. d'Alessandro, C. Maneux, “Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit", Microelectronics Reliability, pp. 1422-1437, 2015.
  • Nitin Prasad, Prasad Sarangapani, Krishnan Nadar Savithry Nikhil, Nandita DasGupta, Amitava DasGupta, Anjan Chakravorty, “An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors”, IEEE Transactions on Electron Devices, Vol. 62, No. 3, pp. 919-926, 2015.
  • Venkata Narayana Rao Vanukuru, Anjan Chakravorty, “Series Stacked Multipath Inductor With High Self Resonant Frequency”, IEEE Transactions on Electron Devices, Vol. 62, No. 3, pp. 1058-1062, 2015.

2014
  • Z. Huszka, A. Chakravorty, “Implementation of Delay-Time-Based Nonquasi-Static Bipolar Transistor Models in Circuit Simulators”, IEEE Trans. Electron Devices, Vol. 61, Issue: 8, pp. 3004 – 3006, 2014.
  • V.N.R. Vanukuru, A. Chakravorty, "High Density Solenoidal Series Pair Symmetric Inductors and Transformers", IEEE Trans. Electron Devices, Vol. 61, Issue: 7, pp. 2503 - 2508, 2014.
  • V.N.R. Vanukuru, A. Chakravorty, "High-Q Characteristics of Variable Width Inductors With Reverse Excitation", IEEE Trans. Electron Devices, Vol. 61, Issue: 9, pp. 3350 - 3354, 2014.
  • V.N.R. Vanukuru, A. Chakravorty, "Design of Novel High-Q Multipath Parallel-Stacked Inductor", IEEE Trans. Electron Devices, Vol. 61, Issue: 11, pp. 3905 - 3909, 2014.

2012
  • N. V. Sudheer and A. Chakravorty, “Regional Approach to Model Charges and Capacitances of Intrinsic Carbon Nanotube Field Effect Transistors”, Journal of Computational Electronics, Springer, DOI 10.1007/s10825-012-0391-1, 2012.
  • N. Augustine, K. Kumar, A. Bhattacharyya, T. Zimmer, and A. Chakravorty, “Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme”, IEEE Trans. Electron Devices, vol. 59, pp. 2542-2545, 2012.

2011
  • U. RadhaKrishna, A. DasGupta, N. DasGupta, and A. Chakravorty, “Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating”, IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 4035-4041, 2011.

2010
  • J. Jacob, A. DasGupta, M. Schroter, A. Chakravorty, “Modeling Non-Quasi-Static Effects in SiGe HBTs”, IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1559-1566, 2010.

2008
  • A. Dey, A. Chakravorty, N. Dasgupta, A. Dasgupta, "Analytical Model of Sub-threshold Current and Slope for Asymmetric 4T and 3T Double Gate MOSFETs", IEEE Trans. Electron Devices, vol. 55, no.12, pp. 3442-3449, Dec 2008.

2007
  • A. Chakravorty, R. F. Scholz, B. Senapati, R. Garg, C. K. Maiti, “Design of Active Inductors in SiGe/SiGe:C Processes for RF Applications”, Int. J. RF and Microwave Computer Aided Engineering, pp. 455-468, 2007.

2006
  • A. Chakravorty, R. F. Scholz, D. Knoll, A. Fox, B. Senapati, C.K. Maiti, “Implementation of a scalable VBIC model for SiGe:C HBTs”, Solid State Electronics, pp. 399-407, 2006.

2005
  • A. Chakravorty, R. F. Scholz, B. Senapati, D. Knoll, A. Fox, R. Garg, and C. K. Maiti, “Accurate Modeling of SiGe:C HBTs using Adaptive Neuro Fuzzy Inference System ”, J. Materials Science in Semiconductor Processing, vol. 8, pp. 307-311, 2005.

2004
  • A. Chakravorty, R. Garg, C. K. Maiti, “Comparison of State of the Art Bipolar Compact Models for SiGe HBTs ”, Journal of Applied Surface Science, vol 224, pp 354-360, 2004.
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