Welcome to the Microelectronics and MEMS Laboratory, IIT Madras
 
   

 

Research publications

  1.   Udit Rawat, Deleep Nair and Amitava DasGupta, "Piezoelectric-on-Silicon Array Resonators with Asymmetric Phononic Crystal Tethering", IEEE Journal of Microelectromechanical Systems (JMEMS), accepted.

  2.   Shelly Aggarwal, Braineard Eladi Paul, Amitava DasGupta and Dhiman Chatterjee, "Experimental characterization of piezoelectrically actuated silicon micromachined valveless micropump", Microfluidics and Nanofluidics, 21: 2. DOI:10.1007/s10404-016-1837-8, January 2017.

  3.   Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs", IEEE Trans. Electron Devices, vol. 63, no.12, pp. 4693-4701, Dec. 2016.

  4.   Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "A Compact Model of Drain Current for GaN HEMTs based on 2DEG Charge Linearization", IEEE Trans. Electron Devices, vol. 63, no.11, pp. 4226-4232, Nov. 2016.

  5.   Nikhil K. S., Nandita DasGupta, Amitava DasGupta and Anjan Chakravorty, "Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors", IEEE Trans. Electron Devices, vol. 63, no. 10, pp. 4003-4010, Oct. 2016.

  6.   Sarath Gopalakrishnan, Amitava DasGupta and Deleep R. Nair, "Study of the Effect of Surface Roughness on the Performance of RF MEMS capacitive switches through 3-dimensional geometric modeling", IEEE Journal of the Electron Devices Society, vol. 4, no. 6, pp. 451-458, 2016.

  7.   Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs", IEEE Trans. Electron Devices, vol. 63, no.4, pp. 1450-1458, April 2016.

  8.   Sreenidhi Turuvekere, Amitava DasGupta and Nandita DasGupta, "Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs", IEEE Trans. Electron Devices, vol. 62, no. 10. pp. 3449-3452, Oct. 2015.

  9. Nitin Prasad, Prasad Sarangapani, Nikhil K. S., Nandita DasGupta,  Amitava DasGupta, and Anjan Chakravorty “An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors”, IEEE Trans. Electron Devices, vol.62, no.3, pp. 919-926, March 2015.

  10. Sreenidhi Turuvekere, Dipendra Singh Rawal,  Amitava DasGupta, and Nandita DasGupta, “Evidence of Fowler " Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature", IEEE Trans. Electron Devices, vol. 61, no. 12. pp. 4291-4294, Dec. 2014.

  11. Gourab Dutta, Sreenidhi Turuvekere, Naveen Karumuri, Nandita DasGupta, and  Amitava DasGupta, “ Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT”, IEEE Electron Device Letters, vol. 35, no. 11. pp. 1085-1087, Nov. 2014.

  12. K. Naveen, T. Sreenidhi, Nandita DasGupta and  Amitava DasGupta, “ A Continuous Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMTs valid for all Bias Voltages”, IEEE Trans. Electron Devices, vol. 61, no,7. pp. 2343-2349, July 2014.

  13. T. Sreenidhi, K. Naveen, A. Azizur Rahman, Arnab Bhattacharya,  Amitava DasGupta, and Nandita DasGupta, “ Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling”, IEEE Trans. Electron Devices, vol. 60, no,10. pp. 3157 - 3165, Oct. 2013.

  14. D.S. Rawal, B.K. Sehgal, R. Muralidharan, H.K. Malik and   Amitava Dasgupta,“ "Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching“, , Vol. 86, Issue 12, pp. 1844-1849, July 2012.

  15.   Paul E. Braineard, Dhiman Chatterjee and Amitava DasGupta, "An efficient numerical method for predicting the performance of valveless micropump Smart Materials and Structures", vol. 21 (Article No. 115012), Nov. 2012.

  16.   G S Jayadeva and Amitava DasGupta, "Quantum Mechanical Effects in Bulk MOSFETS from a Compact Modeling Perspective-A Review", IETE Technical Review, vol. 29, no.1, pp. 3-28, Jan-Feb. 2012.

  17.   Jaibir Sharma, Nagendra Krishnapura and Amitava DasGupta, "Fabrication of low pull-in voltage RF MEMS switches on glass substrate in recessed CPW configuration for V-band application", Journal of Micromech. and Microengg., vol.22, (Article No. 025001), 2012.

  18.   Ujwal Radhakrishna, Nandita DasGupta, Amitava DasGupta, and Anjan Chakravorty, "Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback and Self-Heating", IEEE Trans. Electron Devices, vol. 58, pp. 4035-4041, November 2011.

  19.   G S Jayadeva and Amitava DasGupta, Analytical Approximation for the Surface Potential in n-channel MOSFETs considering Quantum Mechanical Effects", IEEE Trans. Electron Devices, pp. 1820-1828, August 2010.

  20.   J. Jacob, Amitava DasGupta, M. Schröter and A. Chakravory, "Modeling Non-Quasi-Static Effects in SiGe HBTs", IEEE Trans. Electron Devices, pp. 1559-1566, July 2010.

  21.   Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, "Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model", IEEE Trans. On Device and Materials Reliability, pp. 247-253, June 2010.

  22.   Jaibir Sharma and Amitava DasGupta, "Effect of stress on the pull-in voltage of membranes for MEMS application", Journal of Micromech. and Microengg., vol. 19, issue 11, (Article No. 115021), Nov. 2009.

  23.   Binsu J Kailath, Amitava DasGupta, Nandita DasGupta, B N Singh and L M Kukreja, "Growth of Ultra-thin SiO2 by Laser Induced Oxidation", Semiconductor Science & Technology, vol.24, Issue 10, (Article No. 105011), Oct. 2009.

  24.   T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, "Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique", Electronics Letters, Vol. 45, no. 10, pp. 527-528, May 7, 2009.

  25.   Jaibir Sharma and Amitava DasGupta, "Fabrication of reliable RF MEMS switches in CPW configuration", Advanced Materials Research, Vol. 74, pp 259-263, 2009.

  26.   G.S. Jayadeva and Amitava DasGupta, "Compact model of short channel MOSFETs considering quantum mechanical effects", Solid State Electronics, Vol.53, pp.649-657, June 2009.

  27.   Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta and Amitava DasGupta, "Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs", Solid State Electronics, Vol.53, pp.256-265, March 2009.

  28.   T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma”, Semicond. Sci. Technol, Vol.23, Issue 12, (Article No. 125019), Dec. 2008.

  29.   Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta, "Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs", IEEE Trans. Electron Devices, pp. 3442-3449, December 2008.

  30.   Jaibir Sharma and Amitava DasGupta, "A low temperature wet release process for low stiffness structures", Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043007-1-5, October-December 2008.

  31.   Jaibir Sharma and Amitava DasGupta, "Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams", Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043020-1-6, October-December 2008.

  32.   Binsu J Kailath, Amitava DasGupta, and Nandita DasGupta "Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions", IEEE Trans. On Device and Materials Reliability, vol.7, no.4, pp. 602-610, Dec. 2007.

  33.   B. Bindu, Nandita DasGupta and Amitava DasGupta, “A unified model for gate-capacitance voltage characteristics and extraction of parameters of Si/SiGe heterostructure PMOSFETs”, IEEE Trans. Electron Devices, vol. 54, pp. 1889 - 1896, August 2007.

  34.   Binsu J. Kailath, Amitava DasGupta and Nandita DasGupta, "Optimisation of AC Anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide",Solid State Electronics, Vol.51, pp.762-770, May 2007.

  35.   K.N.Bhat, A.DasGupta, P.R.S.Rao, N.DasGupta, E.Bhattacharya, K.Sivakumar, V.Vinoth Kumar, L.Helen Anitha, J.D.Joseph, S.P.Madhavi, and K.Natarajan "Wafer Bonding -A Powerful Technique for MEMS", Indian Journal of Pure and Applied Physics, vol.45, no.4, pp. 311-316, April 2007.

  36.   Binsu Kailath, Nandita Das Gupta and Amitava Das Gupta, "Improvement in the interfacial properties and electrical characteristics of ultra-thin SiO2 by selective anodization", IETE Journal of Research, vol. 52, no.5, pp. 357 – 363, September-October 2006.

  37.   Dnyanesh S. Havaldar, Nandita DasGupta and Amitava DasGupta, "Study of Dual Material Gate FinFET using Three-Dimensional Numerical Simulation", International Journal of Nanoscience, Vol. 5, Nos. 4-5, pp. 541-546, August & October 2006.

  38.   B. Bindu, N. Lakshmi, K.N. Bhat and Amitava DasGupta, "Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology", Solid-State Electronics, vol. 50, Issue 7-8, pp. 1359-1367, July-August 2006.

  39.   V. Vinoth Kumar, A. DasGupta, K.N. Bhat and K. Natarajan, "Process Optimization for monolithic integration of piezoresistive pressure sensor and MOSFET amplifier with SOI approach", Journal of Physics: Conference Series, vol. 34, pp. 210-215, 2006.

  40.   B. Bindu, Nandita DasGupta and Amitava DasGupta, “Analytical Model of Drain Current of Si/SiGe Heterostructure p-channel MOSFETs for Circuit Simulation”,IEEE Trans. Electron Devices, vol. 53, pp. 1411 - 1419, June 2006.

  41.   B. Bindu, Nandita DasGupta and Amitava DasGupta, "Analytical Model of Drain Current of Strained-Si / Strained-Si1-YGeY / Relaxed-Si1-XGeX NMOSFETs and PMOSFETs for Circuit Simulation", Solid-State Electronics, vol. 50, Issue 3, pp. 448-455, March 2006.

  42.   Dnyanesh S. Havaldar, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, "Subthreshold current and threshold voltage model of FinFETs based on analytical solution of 3-D Poisson equation", IEEE Trans. Electron Devices, vol. 53, pp. 737 -742, April 2006.

  43.   P. Nagaraju and Amitava DasGupta, "Study of Gate Leakage Current in Symmetric Double Gate MOSFETs with High-k/Stacked Dielectrics", Thin Solid Films, vol. 504/1-2, pp. 317-320, May 2006.

  44.   Hrishikesh E. Patel, T. Sundararajan, T. Pradeep, Amitava Dasgupta, Nandita Dasgupta and Sarit K. Das, "A Micro-convection Model for Thermal Conductivity of Nanofluids", Pramana Journal of Physics, vol. 65, no. 5, pp. 863-869, November 2005.

  45.   V.J. Vijayakrishna, S. Vaishnav, Nandita DasGupta and Amitava DasGupta, "Unified analytical model of HEMTs for analog and digital applications", IEEE Proceedings-Circuits, Devices & Systems, vol. 152, no.5, pp. 425-432, October 2005.

  46.   Vaibhav G. Marathe, Roy Paily, Amitava DasGupta and Nandita DasGupta, A model to study the effect of selective anodic oxidation on ultrathin gate oxides, IEEE Trans. Electron Devices,vol. 52, no.1, pp.118-121, January 2005.

  47.   Ravneet Singh, Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M. Kukreja, "Optimized Dual Temperature Pulsed Laser Deposition of TiO2 to Realize MTOS (Metal-TiO2-SiO2-Si) Capacitors with Ultrathin Gate Dielectric", Semiconductor Science & Technology, vol. 20, no 1, pp. 38-43, January 2005.

  48.   Ravneet Singh, Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M. Kukreja, "Laser Induced Oxidation for growth of ultrathin gate oxide", Electronics Letters, vol. 40, no. 25, pp. 1606-1607, December 2004.

  49.   K. Venkateswara Reddy and Amitava DasGupta, A Unified Analytical Model For Charge Transport in Heterojunction Bipolar Transistors, Solid-State Electronics, Volume 48, Issue 9, pp. 1613-1622, September 2004.

  50.   Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M.Kukreja, Effect of Oxygen Pressure and Laser Fluence during Pulsed Laser Deposition of TiO2 on MTOS (Metal-TiO2-SiO2-Si) Capacitor Characteristics, Thin Solid Films, vol. 462-463C, pp. 57-62, 2004.

  51.   M.R.Ravi, Amitava DasGupta and Nandita DasGupta, Silicon Nitride and Polyimide Capping Layers on InGaAs/InP PIN photodetector after Sulfur Treatment, Jl. of Crystal Growth, vol. 268, Issue 3-4, pp. 359-363, 2004.

  52.   Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, Threshold voltage model for mesa isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poissons equation, IEEE Trans. Electron Devices, vol. 51, no.7, pp.1169-1177, July 2004.

  53.   M.R. Ravi, Amitava DasGupta & Nandita DasGupta, Effect of Sulfur Passivation and Polyimide capping on InGaAs-InP PIN photodetectors, IEEE Trans. Electron Devices, vol. 50, no.2, February 2003.

  54.   Roy Paily, Amitava DasGupta and Nandita DasGupta, Improvement in Electrical Characteristics of Ultra-Thin Thermally Grown SiO2 by Selective Anodic Oxidation IEEE Electron Device Lett, Vol.23, no.12, pp. 707-709, Dec.2002.

  55.   E. Anulekha Manjari, A. Subrahmanyam, N. DasGupta & A. DasGupta, Electrical characterization of Metal-Insulator-Semiconductor capacitors with xerogel as dielectric, Applied Physics Letters, vol.80, no.10, pp. 1800-1802, March 11, 2002.

  56.   Roy Paily, Amitava DasGupta, Nandita DasGupta, Pijush Bhattacharya, Pankaj Misra, Tapas Ganguli, Lalit M.Kukreja, A.K. Balamurugan, S. Rajagopalan & A.K. Tyagi, Pulsed Laser Deposition of TiO2 for MOS Gate Dielectric, Applied Surface Science, vol. 187, pp.297-304, Feb. 2002.

  57.   Kishore Kuna V.S.R., Naveen Kumar V., Amitava DasGupta & Nandita DasGupta, Effect of etch mask and etching solution on InP micromachining to form V-grooves", J. of Electrochem. Soc., vol. 148 (4), pp.C322-C326, April 2001.

  58.   K. Pavan Kumar & Amitava DasGupta, An analytical model for conduction and valence band edge profiles of bandgap graded and displaced heterojunctions, Solid-State Electronics, vol.41, no.10, pp. 1779-1786, 0ctober 1998.

  59.   N.DasGupta & Amitava DasGupta, A new SPICE MOSFET Level-3 like model of HEMTs for circuit simulation, IEEE Trans. Electron Devices, vol. 45, no.7, 1494-1500, July 1998.

  60.   Amitava DasGupta, D.Arslan, A.Sigurdardottir and H.L.Hartnagel, A novel self-consistent simulator for current-voltage characteristics of semiconductor field emitters, Applied Physics Letters, pp.1220-1222, March 9, 1998.

  61.   K.Pavan Kumar & Amitava DasGupta, Influence of emitter-base junction displacement on the band structure in Heterojunction Bipolar Transistors, Solid-State Electronics, ol. 55, pp.101-103, 1997.

  62.   Amitava DasGupta & Nandita DasGupta, A simple analytical model of gate capacitance-voltage characteristics of HEMT, Solid-State Electronics, vol.37, no.7, pp.1377-1381, July 1994.

  63.   Nandita DasGupta & Amitava DasGupta, An analytical expression for sheet carrier concentration versus gate voltage for HEMT modelling, Solid-State Electronics, vol.36, no.2, pp.201-203, Feb.1993.

  64.   S.K.Lahiri, Amitava DasGupta, I.Manna & M.K.Das, A quasi-3D analytical threshold voltage model of small geometry MOSFETs, Solid-State Electronics, vol.35, no.12, pp.1721-1727, Dec.1992.

  65.   Amitava DasGupta & S.K.Lahiri, An analytical punchthrough voltage model of short-channel MOSFETs with implanted channels, Solid-State Electronics, vol.33, no.4, pp.395-400, Apr.1990.

  66.   Amitava DasGupta & S.K.Lahiri, A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian doped channels, IEEE Trans. Electron Devices, ED-35, no.3, pp.390-392, March 1988.

  67.   Amitava DasGupta & S.K.Lahiri, An analytical threshold voltage model of short-channel MOSFETs with Gaussian doped channels, IEEE Trans. Electron Devices, ED-34, no.7, pp.1777-1778, July 1987.

  68.   Amitava DasGupta & S.K.Lahiri,  A new boron implantation model suitable for analytical modelling of threshold voltages of MOSFET, Solid-State Electronics, vol.30, no.5, pp.1283-1287, May1987.

  69.   Amitava DasGupta & S.K.Lahiri, An analytical solution of Poissons equation for MOSFETs with Gaussian doped channels, Solid-State Electronics, vol.29, no.11, pp.1205-1206, Nov.1986.

  70.   Amitava DasGupta & S.K.Lahiri, A novel analytical threshold voltage model of MOSFETs with implanted channels, International Journal of Electronics, vol.61, no.5, pp.655-669, May1986.

     

    (ii) Presented at Conferences

    1.   Anushree Tomer, Gourab Dutta, Amitava DasGupta and Nandita DasGupta,"Comparison of Shallow Interface Traps in AlGaN / GaN MIS-HEMT Devices with three different Gate Dielectrics",3 rd International Conference on Emerging Electronics (ICEE), IIT Bombay, 27 - 30 December-2016.

    2.   Shelly Agarwal, Amitava DasGupta and Dhiman Chatterjee, "Experimental Characterization of Piezoelectrically actuated silicon micromachined valveless micropump",in 2016 International Conference on Microfluidics, Nanofluidics and Lab-on-a-Chip, Dalian, China from 10th June to 12thJune, 2016.

    3.   Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "Improved Device Performance of GaN-based MIS-HEMTs by Using Low Temperature Deposited ICP-CVD Si3N4 as Gate Dielectric and Passivation Layer",IUMRS - ICEM 2016, Singapore, July-2016.

    4.   Amitava DasGupta, "MEMS for RF Applications",Keynote Address, IEEE International Conference on Microelectronics,for Computing and Communication (MicroCom-2016), NIT Durgapur, January-2016.

    5.   Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "AlGaN / GaN MIS-HEMT using ICP-CVD Silicon Nitride as gate dielectric",18th International workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, December 2015.

    6.   Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "A Physics based Drain Current Compact Model for GaN based HEMTs",11th International Conference on Nitride Semiconductors, Beijing, Aug.30 - Sep.4, 2015.

    7.   Sujith Thomas, Nitin Prasad, Amitava DasGupta, Anjan Chakravorty and Nandita DasGupta,"Parameter extraction methodology for SOI-LDMOS transistors",Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on, pp.503-506, 2015.

    8.   Gourab Dutta, Naveen Karumuri, Nandita DasGupta, and Amitava DasGupta, "Effect of Al2O3 layer thickness on the threshold voltage of GaN-based MIS-HEMTs", 11th International Conference on Nitride Semiconductors, Beijing, Aug. 30 - Sep. 4, 2015.

    9.   U. Rawat, D R. Nair, A DasGupta, "Design Of Low-loss Phononic Crystal Tethering for RF MEMS Resonator Applications", International Conference on MEMS and Sensors (ICMEMSS), Chennai, 18-20 December 2014.

    10.   G. Sarath Amitava DasGupta , D R. Nair, " Stress Relief Membranes for RF MEMS Capacitive Switches", International Conference on MEMS and Sensors (ICMEMSS), Chennai, 18-20 December 2014

    11.   Vikrama Vamshi Pasula, D R. Nair,Amitava DasGupta " Fabrication And Characterization Of Coplanar Waveguide Piezoresistive Mems Resonators ", International Conference on MEMS and Sensors (ICMEMSS), Chennai, 18-20 December 2014

    12.   Shelly Agarwal, Paul E. Brainerd, and D.Chatterjee,Amitava DasGupta " Design of efficient Piezoelectric Actuator for MEMS devices ", International Conference on MEMS and Sensors (ICMEMSS), Chennai, 18-20 December 2014

    13.   Selwin Kumar Pushpadhas, Deleep R. Nair and Amitava DasGupta " A Novel FinFET with Dynamic Threshold Voltage ", International Conference on Emerging Electronics (ICEE-2014), Bangalore, December 2014

    14. T Sreenidhi, Amitava DasGupta, and Nandita DasGupta, Amitava DasGupta " AlGaN/GaN MOS-HEMTs Using Rapid Thermal Oxidation of Barrier Layer ", International Conference on Emerging Electronics (ICEE-2014), Bangalore, December 2014

    15. Vikrama Vamshi Pasula, George Thachil, Amitava DasGupta " Extraction of Characteristic Impedance of Coplanar Waveguides for RF MEMS Switch Applications ", International Conference on Smart Materials Structures and Systems 2014 (ISSS 2014), Bangalore, 8 - 11 July 2014.

    16. U. Rawat, D. R. Nair, Amitava DasGupta " Design of a 1 GHz piezoelectric micromechanical resonator with low insertion loss and high Q-factor ", International Conference on Smart Materials Structures and Systems 2014 (ISSS 2014), Bangalore, 8 - 11 July 2014.

    17. G. Sarath,Amitava DasGupta , D. R. Nair," 3-D Modeling to study the impact of surface roughness on the electrical characteristics of RF MEMS capacitive switch, ", International Conference on Smart Materials Structures and Systems 2014 (ISSS 2014), Bangalore, 8 - 11 July 2014, accepted.

    18. T. Sreenidhi, K. Naveen, A. Azizur Rahman, Arnab Bhattacharya,Amitava DasGupta , and Nandita DasGupta, " Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation ", MRS Fall Meeting, Boston, December 2013.

    19. Vikrama Vamshi Pasula, Deleep Nair andAmitava DasGupta , " Design of Piezoresistive MEMS Resonator Operating Beyond 1GHz ", 17th International workshop on the Physics of Semiconductor Devices (IWPSD2013), New Delhi, December 2013..

    20. Naveen Karumuri, T Sreenidhi, Amitava DasGuptaand Nandita DasGupta, “An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge,” ICEE 2012, Mumbai, Dec. 2012.

    21. T Sreenidhi Amitava DasGupta and Nandita DasGupta, "Temperature and Bias Dependent Gate Leakage in AlInN/GaN High Electron Mobility Transistor", ICEE 2012, Mumbai, Dec. 2012.

    22. G.S.Jayadeva, Amitava DasGupta"Incorporation of quantum mechanical effects in compact models of bulk MOSFETs" (Invited Talk), MOS-AK/India Workshop, New Delhi, March 2012.

    23. Paul Braineard E, Dhiman Chatterjee and Amitava DasGupta"Fabrication and characterization of piezoelectrically actuated valveless pyramidal micropump", International Conference on Smart Materials Structures and Systems, January 4-7, Bangalore, India

    24. T Sreenidhi, Jyotirmoy Chatterjee,Amitava DasGuptaand Nandita DasGupta, “Optimization of Ohmic Contact for the Fabrication of InGaN/GaN Multiple Quantum Well Blue LED”, 16th International workshop on the Physics of Semiconductor Devices (IWPSD2011), Kanpur, December 2011

    25. Manas Kumar Lenka, Amit Sharma, Jaibir Sharma and Amitava DasGupta"Design and Simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications", 16th International workshop on the Physics of Semiconductor Devices (IWPSD2011), Kanpur, December 2011

    26. A. Dey and Amitava DasGupta"An improved analytical solution to surface potential in undoped surrounding gate MOSFET", Proc NSTI Nanotech, June 2010, Anaheim, CA, pp. 797-800. Article #1082.

    27. J. Jacob,Amitava DasGupta and Anjan Chakravorty, “Transient Charge-Based Model for SiGe HBTs”, International Conference on Emerging Trends in Electronic and Photonic Devices and Systems, Varanasi, December 22-24, 2009.

    28. Jaibir Sharma, Nagendra Krishnapura and Amitava DasGupta"RF MEMS Switches with Low Pull-in Voltage", 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009

    29. J. Chatterjee, T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Fabrication and Characterization of InGaN/GaN MQW Blue LED”, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009.

    30. J. Jacob,Amitava DasGupta and Anjan Chakravorty, “Analysis of LCR network for modeling quasi-static effects in SiGe HBTs”, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009.

    31. Kalaiselvi K, Binsu J. Kailath,Amitava DasGupta and Nandita DasGupta, “Ultrathin Gate Oxide by RTO followed by Anodization”, 15th International workshop on the Physics of Semiconductor Devices (IWPSD2009), Delhi, December 2009.

    32. Binsu J Kailath,Amitava DasGupta and Nandita DasGupta, “Ultra thin Oxide by Chemical Vapour Oxidation of Si” International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, July 5-10, Xi’an, China, 2009.

    33. T. Sreenidhi, Amitava DasGuptaand Nandita DasGupta, “Thermally Oxidized LPCVD Silicon as Gate Dielectric on GaN”, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

    34. G.S. Jayadeva and Amitava DasGupta"Fully analytical charge sheet model with quantum mechanical effects for short channel MOSFETs", 2nd InternationalWorkshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

    35. Lekshmi T, Amit Kumar Mittal, Amitava DasGupta Anjan Chakravorty and Nandita DasGupta, “Compact Modeling of SOI-LDMOS including quasi-saturation effect”, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

    36. Jobymol Jacob,Amitava DasGupta and Anjan Chakravorty, “Physics based modeling of non-quasistatic effects in SiGe HBTs”, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

    37. Rathnamala Rao, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta"Study of random Dopant fluctuation effects in fully depleted silicon on Insulator MOSFET using analytical model", 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), June 2009.

    38. G.S.Jayadeva, Amitava DasGupta "Fully analytical surface potential based drain current model of short-channel MOSFETs including quantum mechanical effects", International Conference on Materials for Advanced Technologies (ICMAT-2009), Singapore, June-July 2009.

    39. Jaibir Sharma and Amitava DasGupta,"Fabrication of reliable RF MEMS switches in CPW configuration", International Conference on Materials for Advanced Technologies (ICMAT-2009), Singapore, June-July 2009.

    40. Paul Braineard E, Dhiman Chatterjee, Amitava DasGupta "Numerical study of the effect of extension on the performance of valveless micropump", Proc. International Conference on MEMS (ICMEMS 2009), IIT Madras, January 3-5, 2009.

    41. J. Sharma, N. Krishnapura, Amitava DasGupta V. Kumar and D.V.K Sastry, “Design of high-Isolation and low insertion loss RF MEMS Shunt switches for Ku and K-band application”, Proc. International Conference on MEMS (ICMEMS 2009), IIT Madras, January 3-5, 2009.

    42. Dnyanesh S. Havaldar, Guruprasad Katti, B. M. Jadeja, Rathnamala Rao, Nandita DasGupta and Amitava DasGupta"Performance Enhancement in Asymmetric Gate Dielectric MOSFET", pp. 417 – 420, IEEE International conference on Microelectronics (ICM 2007) Cairo, Egypt, December 2007.

    43. Binsu J.Kailath,Amitava DasGupta Nandita DasGupta, S Bhattacharya, B. M. Armstrong, H. S. Gamble and J McCarthy, “Novel low temperature techniques for growth of ultrathin oxides for Strained Si MOS Devices”, pp. 429 – 432, IEEE International conference on Microelectronics (ICM 2007) Cairo, Egypt, December 2007.

    44. Amitava DasGupta"Multiple Gate MOSFETs: The Road to the Future", Invited Paper, 14th International workshop on the Physics of Semiconductor Devices (IWPSD2007), Mumbai, pp. 96-101, December 2007.

    45. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta Nandita DasGupta, D.W. McNeill and H.Gamble , “Effect of Nitridation on Al/HfO2/Ge MIS Capacitors”, pp. 194-197, 14th International workshop on the Physics of Semiconductor Devices (IWPSD2007), Mumbai, pp. 194-197, December 2007.

    46. Jaibir Sharma and Amitava DasGupta "A novel technique for extraction of material properties through measurement of pull-in voltage and off-capacitance of beams”, Proc. SPIE Symposium onReliability, Packaging, Testing and Characterization of MEMS/MOEMS VI, vol. 6463, p. 646309-1, 20-25 January 2007, San Jose, CA.

    47. Binsu J. Kailath, S. Bhattacharya, Amitava DasGupta Nandita DasGupta, D.W. McNeill and H.Gamble , "Effect of Nitridation on Al/HfO2/Ge MIS Capacitors", pp. 194-197, 14th International workshop on the Physics of Semiconductor Devices (IWPSD2007), Mumbai, pp. 194-197, December 2007.

    48. Binsu J Kailath, Nandita DasGupta and Amitava DasGupta"Improved reliability characteristics for thermally grown ultra thin gate oxide by optimized anodic oxidation", Proceedings of the Second International Conference on Reliability and Safety Engineering, Dec 18-20, 2006, Chennai, pp 508-514.

    49. Jaibir Sharma and Amitava DasGupta "Measurement of internal stress in annealed electroplated Gold using double-supported beam", National Conference on Smart structure and MEMS Systems for Aerospace applications (ISSS-MEMS), 23-24 Nov. 2006.

    50. B. Bindu, N. Lakshmi, K. N. Bhat and Amitava DasGupta, "Virtual Double-Gate Operation in Conventional SOI CMOS Technology", Proc. IEEE Indicon 2005, pp. 119-122, IIT Madras, Chennai, Dec. 2005.

    51. Binsu J.Kailath, Nandita DasGupta, Amitava DasGupta, S. Bhattacharya, J. McCarthy, B. M. Armstrong, H. S. Gamble, Pankaj Misra and L.M.Kukreja, “Electrical Characterization of Al/SiO2-TiO2/Strained Si/Relaxed SiGe MTOS Capacitors”, International Conference on MEMS and Semiconductor Nanotechnology, IIT Kharagpur, December 2005.

    52. Amitava DasGupta, B. Bindu, P.V. Nagaraju, D.S. Havaldar and Nandita DasGupta, “Non-classical silicon devices for nano-CMOS technology”, International Conference on MEMS and Semiconductor Nanotechnology, IIT Kharagpur, December 2005 (Invited Talk).

    53. Binsu Kailath, Vaibhav G Marathe, Nandita Das Gupta and Amitava DasGupta, "Chemical oxidation of silicon to grow ultra thin oxide", Proceedings of the 13th International Workshop on the Physics of Semiconductor Devices (IWPSD2005), New Delhi, December, 2005.

    54. B. Bindu, Nandita DasGupta and Amitava DasGupta "Analytical Model of Drain Current of Strained-Si/SiGe/Si p-channel MOSFETs for Circuit Simulation", Proceedings of the 13th International Workshop on the Physics of Semiconductor Devices (IWPSD2005), pp. 1064-1068, New Delhi, December, 2005.

    55. K.N.Bhat, E. Bhattacharya, and Amitava DasGupta N.Dasgupta, P.R.S.Rao, V.Vinoth Kumar, K.Sivakumar, S.R.Manjula, S.P. Madahvi, Y.Sushma, R.J.Daniel,"Silicon Fusion Bonding and SOI Technology for Micromachined Pressure Senaors and Accelerometers", Proceedings (in CD) pp1-9, Natioinal Workshop on MEMS for Aerospace Applications (MEMSPACE-2004), VSSC, ISRO, Trivandrum, January 16-17, 2004.

    56. Amitava DasGupta, Roy Paily and Nandita DasGupta, Improvement in Breakdown field strength of thin thermally grown SiO2 by selective anodic oxidation, (Invited Paper), Proceedings of International Conference on Communications, Devices & Intelligent Systems (CODIS2004), p. 400 - 403, Kolkata, January 2004.

    57. Vaibhav G. Marathe, Roy Paily, Nandita DasGupta and Amitava DasGupta, Effect of Selective Anodic Oxidation on Electrical Characteristics of MOS capacitors with Ultra-Thin Gate Oxide (30Å) Grown at Different Temperatures Proceedings of the 12th International workshop on the Physics of Semiconductor Devices (IWPSD2003), p.483, IIT Madras, December, 2003.

    58. Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M.Kukreja, Effect of Low Temperature Buffer Layers during Pulsed Laser Deposition of TiO2 on MTOS (Metal-TiO2-SiO2-Si) Capacitor Characteristics, Proceedings of the 12th International workshop on the Physics of Semiconductor Devices (IWPSD2003), p.480, IIT Madras, December, 2003.

    59. Anand Kumar Illa, Amitava DasGupta and Nandita DasGupta, Analytical Subthreshold Current Modelling of Non-Uniformly doped Small Geometry SOI MOSFETs, Collected Abstracts of International Conference on Materials for Advanced Technologies (ICMAT-2003), p.507, Singapore, December, 2003.

    60. K.N. Bhat, C. Yellampalle, N.DasGupta, A.DasGupta and P.R.S. Rao, Optimisation of EDP solutions for feature size independent silicon etching, Proc. SPIE Symposium on Micromachining and Microfabrication, vol.4979, San Jose, USA, January 2003.

    61. B. R. Koti Reddy, P.R.S. Rao, A. DasGupta and P.R.S. Rao, Silicon-on-Insulator (SOI) wafer fabrication for MEMS applications, Proc. International Conference on Smart Materials, Structures and Systems, pp.798-807, Bangalore, Dec.12-14, 2002

    62. K.N.Bhat, E.Bhattacharya, A. DasGupta, N. DasGupta, B.R.Koti Reddy, P.R.S.Rao and Krishnan Balasubramaniam, Polysilicon Piezoresistive Pressure Sensor using Silicon on Insulator (SOI) Approach, Proc. International Conference on Smart Materials, Structures and Systems, pp.798-807, Bangalore, Dec.12-14, 2002

    63. Guruprasad Katti, N.Lakshmi, Amitava DasGupta and Nandita DasGupta, Analytical threshold voltage model for SOI MOSFET including the potential drop in the SOI substrate, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp.1312-1315, New Delhi, Dec 2001.

    64. Roy Paily, Amitava DasGupta and Nandita DasGupta, Improvement in Breakdown field strength of thin thermally grown SiO2 by selective anodic oxidation, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp.690-694, New Delhi, Dec 2001.

    65. K.N.Bhat, N. Lakshmi and A. DasGupta, SOI technology, devices and characterization, Proc. 11th International Workshop on Physics of Semiconductor Devices, pp.576-583, New Delhi, Dec 2001.

    66. Nandita DasGupta, Roy Paily, Amitava DasGupta, Tapas Ganguli, Pankaj Misra, Pijush Bhattacharya and L.M.Kukreja, Pulsed Laser Deposition of TiO2 to realize MTOS (Metal-TiO2-SiO2-Si) capacitor Proc. DAE-BRNS Topical Meeting on Pulsed Laser Deposition (PLD-2001), C.A.T Indore, pp.5-7, Nov.2001.

    67. K.N.Bhat, N. DasGupta, A. DasGupta, P.R.S.Rao and R. Navin Kumar, Oxidation process optimization for large area silicon fusion bonded devices and MEMS structures, Proc. International MEMS Workshop, NUS Singapore, pp.279-285, July 2001.

    68. Nandita DasGupta, Naveen Kumar V., Kishore K.V.S.R., I.K.Tejaswi, S.Rajkumar and Amitava DasGupta, Passive coupling of InGaAs/InP PIN detector and single mode fibre using InP bulk micromachining, Proc. EOS/SPIE Applied Photonics Symposium, Glasgow, UK, May22-25, 2000.

    69. R. Navin Kumar, S.Kareemulla, A.DasGupta, N.DasGupta, P.R.S.Rao and K.N.Bhat, Low temperature pressure assisted silicon bonding for micromechanical applications, Proc. COPEN 2000, I.I.T. Madras, pp.321-326, Jan.2000.

    70. S. Rajkumar, I.K.Tejaswi, K.V.S.R. Kishore, V. Naveen Kumar, A.DasGupta & N.DasGupta, Bulk micromachining of InP substrate for self aligning single mode fibre with InGaAs/InP PIN detector, Proc. COPEN 2000, I.I.T. Madras, pp.315-320, Jan.2000.

    71. A.DasGupta, S. Vaishnav, V. Pradeep Reddy & N.DasGupta, A new unified analytical model for I-V characteristics of HEMTs, (Invited paper) Proc. 10th International Workshop on Physics of Semiconductor Devices, pp. 467-474, New Delhi, Dec. 1999.

    72. V. Naveen Kumar, K.V.S.R. Kishore, P.R.S. Rao, A. DasGupta & N.DasGupta, A Passivation study for low dark current InGaAs/InP PIN diode, Proc. 10th International Workshop on Physics of Semiconductor Devices, pp. 617-620, New Delhi, Dec. 1999.

    73. K. Venkateswara Reddy & A.DasGupta, An analytical model for conduction and valence band edge profiles of nonuniformly doped, bandgap graded and displaced heterojunctions, Proc. 10th International Workshop on Physics of Semiconductor Devices, pp. 641-644, New Delhi, Dec. 1999.

    74. D. Arslan, A. DasGupta, M. Flath and H.L. Hartnagel, Fabrication and characterization of a GaAs Field emission triode for low voltage operation at atmospheric pressure, Eleventh International Vacuum Microelectronics Conference, pp.287-288, Asheville, NC, USA, 19-24 July, 1998.

    75. K.N. Bhat, P.R.S. Rao, A.DasGupta, N.DasGupta and S.Karmalkar, Micromachining of Silicon, Proc. Seminar on Miniaturisation in Aerospace Systems, pp. BII-1 to BII-26, Hyderabad, Jan.1998.

    76. K.Pavan Kumar & A.DasGupta, Modelling of Heterojunction Bipolar Transistors: a unified approach, (Invited paper) Proc. 9th International Workshop on Physics of Semiconductor Devices, pp.857-864, New Delhi, Dec. 1997.

    77. K.Pavan Kumar & A.DasGupta, Modelling of Heterojunction Bipolar Transistors: a unified approach, (Invited paper) Proc. 9th International Workshop on Physics of Semiconductor Devices, pp.857-864, New Delhi, Dec. 1997.

    78. A. Raghavan, S.K.Lahiri and A.DasGupta, A novel technique for submicron separation between metal lines, Proc. SPIE Conference on Microlithographic Techniques in IC Fabrication, pp. 218-224, Singapore, June 1997.

    79. Deepa Nair J.S., D.Prabhu, P.R.S.Rao, A.DasGupta, S.Karmalkar, N.DasGupta & K.N.Bhat, Pressure-assisted fusion bonding of silicon wafers, Proc. SPIEs 1996 Symposium on Smart Materials, Structures & MEMS, vol.3321, pp.248-252, Bangalore, Dec.1996.

    80. S.K.Lahiri, M.K.Das, A.DasGupta & I.Manna, 3D effects in VLSI/ULSI MOSFETs : a novel analytical approach to model threshold voltage, Proc. 7th International Conference on VLSI Design, pp.328-332, Calcutta, India, Jan.1994.

    81. A.DasGupta, S.K. Ray, S.Kal & N.B.Chakrabarti, Laser probing of analog and digital circuits, Proc. International Microelectronics Conference, Tokyo, Japan, May 1988.

    82. A.DasGupta & S.K.Lahiri, A 2-D analytical model of threshold voltage of short-channel MOSFETs with implanted channels, Proc. International Symposium on Electronic Devices, Circuits & Systems, IIT Kharagpur, India, Dec.1987.

    83. A.DasGupta & S.K.Lahiri, A new technique for modelling threshold voltages of MOSFETs with nonuniformly doped channels, Proc. VI National Seminar on Semiconductor and Devices, IACS, Calcutta, India, Dec. 1986.

     

 

     copyrights ©   2017  ®   reserved.     Prof. Dr. Amitava DasGupta              MEMS                                                 EE                    IITM