Abstract: Resistive random-access memory (ReRAM) devices offer promising opportunities for integrating memory, sensing, and computing functions beyond conventional digital memory. This research presents a device-to-system investigation of oxide-based ReRAM technologies, focusing on Tunable-Capacitance ReRAM (TCReRAM) and Volatile ReRAM for emerging sensing and neuromorphic applications. First, HfOₓ-based TCReRAM is investigated as a tunable capacitive element for CMOS image sensors, enabling adaptive pixel operation and extended functionality beyond conventional conductance-based ReRAM.

Second, a physics-based compact model is developed to describe the nonlinear, voltage-dependent capacitance of TCReRAM by capturing the influence of conductive-filament-induced barrier modulation and is validated against experimental measurements and Ginestra TCAD simulations. The model provides a circuit-compatible framework for evaluating and designing TCReRAM-based circuits and image-sensing architectures.

Third, ZnO-based volatile ReRAM devices are explored as physical reservoirs for reservoir computing. Their intrinsic volatile switching dynamics provide nonlinear and history-dependent responses that can be exploited for temporal information processing. The reservoir-computing performance is evaluated under both pristine and radiation-exposed conditions to investigate the impact of ionising radiation on device dynamics and computational accuracy. The results demonstrate the potential of oxide-based ReRAM devices as multifunctional building blocks for adaptive sensing, compact modelling, and hardware-efficient computing, while highlighting the challenges and opportunities associated with their operation in radiation environments.

Event Details
Title: Oxide-based resistive memory devices for emerging sensing and computing applications
Date: August 19, 2026 at 4:00 PM
Venue: ESB244
Speaker: Mr. Salil Chourasia (EE21D403)
Guide: Dr. Bhaswar Chakrabarti
Type: PHD seminar

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