Abstract: Gate leakage current is a critical factor limiting the performance and reliability of AlGaN/GaN high-electron-mobility transistors (HEMTs). Conventional analyses typically assume a uniform current distribution across the gate and employ a one-dimensional electric field, which can lead to an incomplete understanding of the underlying leakage mechanisms. In this seminar, a systematic framework for analysing gate leakage current is presented by separating its edge and areal components. The study reveals that gate leakage is predominantly concentrated at the gate edges, highlighting the importance of considering the two dimensional edge electric field in mechanism identification. Temperature-dependent measurements are used to investigate the dominant transport mechanisms under forward and reverse bias conditions. The results demonstrate that thermionic emission governs forward-bias leakage, while Poole–Frenkel emission and trap-assisted tunnelling dominate under reverse bias. The findings further show that edge-field-based analysis provides physically meaningful parameter extraction, offering improved insight into gate leakage behaviour and reliability in AlGaN/GaN HEMTs.

Event Details
Title: Analysis of the Reverse Gate Leakage Current Mechanisms in the Edge Current-Dominated GaN HEMTs using Measurements
Date: July 20, 2026 at 02:00 PM
Venue: Google Meet (https://meet.google.com/dxr-qdub-hdt)
Speaker: Ms. A. V. Nandini Devi (EE18D028)
Guide: Dr. Karmalkar S R
Type: PHD seminar

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