EE6331: Embedded Memory Design (Jan 2021)
Instructors
Classroom
Online - Flipped Classroom Mode
Schedule
Live session: S-slot - Thu (2:00 - 3:00 PM)
Evaluation
Weekly Quiz: 20%
Mid Term: 30%
Project : 20%
End Semester Exam: 30%
Course Objective
(Why we teach this course?)
Introduce students to some relevant advanced topics of current interest in academia and industry
Give the students a feel for research topics
Make students aware of work happening in industries, specifically in India
This course will cover three broad subjects:
SRAM design (Rahul Rao)
Embedded DRAM design (Janakiraman)
Non-Volatile Memories (Janakiraman)
Learning Objectives
(What the students should be able to do after the course)
Part 1- eDRAM Design and Yield Analysis
Explain the working of a(n) (e)DRAM and what Embedded means?
Explain the working of a feedback sense amplifier and modify existing designs to improve performance
Calculate the voltage levels of operation of various components for an eDRAM
Introduce stacked protect devices to reduce voltage stress of the WL driver
Part 2- SRAM Design
Articulate memory hierarchy and the value proposition of SRAMs in the memory chain + utilization in current processors
Explain SRAM building blocks and peripheral operations and memory architecture (with physical arrangement)
Articulate commonly used SRAM cells (6T vs 8T), their advantages and disadvantages
Explain the operation of a non-conventional SRAM cells, and their limitations
Explain commonly used assist methods
Explain how variations impact memory cells
Week 1
Basics of DRAM
Definition of Embedded
Requirement for short BLs in DRAMs
Transfer ratio
Retention time/ Refresh rate analysis
Power supplies required for eDRAM
Advantages of eDRAM over eSRAM
Lecture Slides
Week 2
Barth, J. et al., “A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 1, JANUARY 2008. PDF
Lecture Slides
Week 3
Week 4
Gated Feedback Sense Amplifier
Construction
Read and Refresh
Read Data Mux
Write
G. Fredeman et al., “A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access,” in IEEE Journal of Solid-State Circuits, vol. 51, no. 1, pp. 230-239, Jan. 2016.
doi: 10.1109/JSSC.2015.2456873 PDF
Lecture Slides
Week 5
Week 6
Week 7
Memory hierarchy
Memory organization
Flip flop
6T SRAM basics
Week 8
Week 9
Memory Arrangement
Alternative Cell Types
Column interleaving
Memory Folding
Lecture Slides
Week 10
Week 11
Week 12
Week 13
Week 14