Welcome to the MEMS and Microelectronics Laboratory,   IIT Madras .
 

Name:  Dr.Nandita DasGupta
Designation: Professor
Address:  Electrical Engineering Department
 : Indian Institute of Technology, Madras 600 036.
Phone:  Off.  2257 4422
 :  Res. 2257 6416 & 2257 0425
Fax:  +91-44-2257 4402
Email ID   : nand@ee.iitm.ac.in


 
 

 Dr.Nandita DasGupta received her B.E. degree in Electronics and Telecommunication Engineering from Jadavpur University, Kolkata, India in 1982, M.Tech and Ph.D from I.I.T. Madras in 1984 and 1988 respectively. She was awarded Alexander von Humboldt Fellowship in 1991 and spent one year in Germany doing Post-doctoral research in the area of Surface Passivation of Compound Semiconductors. She has been a Faculty member in the Department of Electrical Engineering, I.I.T. Madras since 1993 and is currently a Professor. Her research interest is in the area of Silicon and Compound Semiconductor Technology and Modelling as well as MEMS. She has nearly one hundred research publications in International Journals and Proceedings of International Conferences and has co-authored a book on Semiconductor Devices – Modelling & Technology.

Recent Publications

  1. Ramanjaneyulu Mannam, Senthil Kumar Eswaran, M. Priyadarshini, F. Bellarmine, Nandita DasGupta, M.S. Ramachandra Rao, "Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures",  (Accepted in Applied surface science). DOI:http://www.dx.doi.org/10.1016/j.apsusc.01.029.(2017)

  2. Ramanjaneyulu Mannam, E. Senthil Kumar, Nandita DasGupta, M.S. Ramachandra Rao, "Reversible p-type Conductivity in H Passivated Nitrogen and Phosphorous codoped ZnO Thin Films using Rapid Thermal Annealing", Appl. Surf. Sci., Vol.400 pp.312-317 (2017) DOI: http://www.dx.doi.org/10.1016/j.apsusc.12.146. (2016).

  3. M. Priyadarshini, Ramanjaneyulu Mannam, M.S. Ramachandra Rao and Nandita DasGupta , Effect of annealing ambient on SnO2 thin film transistors", (Accepted in Applied surface science).DOI: http://www.dx.doi.org/10.1016/j.apsusc.11.233. (2016).

  4. Lijin George, PR Shaina, Aparna Gupta, Nandita DasGupta, and Manu Jaiswal, "Deformation Of Graphene On An Oxidizing Nickel Surface: The Role Of Graphene Layer Number", Materials Research Express 3 115016 DOI: http://www/dx.doi.org/10.1088/2053-1591/3/11/115016. (2016).

  5. Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "Low Temperature ICP-CVD SiNx as GateDielectric for GaN-Based MIS-HEMTs", IEEE Trans on Electron Devices, Vol.63, No.12, pp 4693-4701, (December 2016).

  6. B K Das, N Das Gupta, S Chandran, S Kurudi, P Sah, R Nandi, Ramesh K, Sumi R, S Pal, Kaushal,S, M Sundaram, P Sakthivel, Sidharth R, R Joshi, H Sasikumar, U Karthik, S Krubhakar, G R Bhatt, J P George, R K Navalakhe, Narendran R, and I Seethalakshmi , "Silicon Photonics Technology: Ten Years of Research at IIT Madras, Chennai, India", Asian Journal of Physics, Vol 25, No 7 (2016).

  7. RamanjaneyuluMannam, F. Bellarmine, E.SenthilKumar, NanditaDasGupta and M. S. RamachandraRao , "Polarity control and enhanced luminescence characteristics of semi-polar ZnO nanostructures grown on non-polar MgO (100) substrates", RSC Adv, 6 93125-93129 .DOI: http://www.dx.doi.org/10.1016/j.apsusc.2017.01.029. (2016).

  8. M Lorenz, M S Ramachandra Rao, T Venkatesan, E Fortunato, P Barquinha, R Branquinho, D Salgueiro, R Martins, E Carlos, A Liu, F K Shan, M Grundmann, H Boschker, J Mukherjee, M Priyadarshini, N DasGupta, D J Rogers, F H Tehrani, E V Sandana, P Bove, K Rietwyk, A Zaban, A Veziridis1, A Weidenkaff, M Muralidhar, M Murakami, S Abel, J Fompeyrine, J Zuniga-Perez, R Ramesh, N A Spaldin, S Ostanin, V Borisov, I Mertig, V Lazenka, G Srinivasan, W Prellier, M Uchida, M Kawasaki, R Pentcheva, P Gegenwart, F Miletto Granozio, J Fontcuberta and N Pryds , "The 2016 Oxide Electronic Materials AndOxide Interfaces Roadmap", Topical review, accepted for publication in J. Phys. D: Appl. Phys.. (2016).

  9. Naveen Karumuri, Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "A Compact Model of Drain Current for GaN HEMTs based on 2-DEG Charge Linearization", IEEE Trans on Electron Devices,, vol.63, No.11, pp.4226-4232,( November 2016 ).

  10. KrishnanNadar Savithry Nikhil, Nandita DasGupta, Amitava DasGupta, and Anjan Chakravorty, "Analysis and Modeling of the Snapback Voltage forVarying Buried Oxide Thickness in SOI-LDMOS Transistors", IEEE Trans on Electron Devices, vol.63, No.10, pp.4003-4010, (Oct. 2016).

  11. Madhup Shukla, Gourab Dutta, Ramanjaneyulu Mannam and Nandita DasGupta, "Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC", Thin Solid Films, vol.607,DOI: http://www.dx.doi.org/10.1016/j.tsf.2016.03.060, (May 2016).

  12. Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Effect of sputtered Al2O3 layer thickness on the threshold voltage of III-N MISHEMTs", IEEE Trans on Electron Devices, vol.63, No.4, pp. 1480-1488, (April 2016).

  13. Lijin George, AparnaGupta, PR Shaina, Nandita DasGupta, and Manu Jaiswal , "Mechanical tearing of graphene on an oxidizing metal surface", Nanotechnology, vol 26, No. 49, (17 November, 2015).

  14. Sreenidhi Turuvekere, Amitava DasGupta and Nandita DasGupta, "Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs", IEEE Trans on Electron Devices, vol.62, No.10, pp.3449-3452, (Oct 2015).

  15. Ramanjaneyulu Mannam, Senthil Kumar Eswaran, Nandita DasGupta, and M. S. Ramachandra Rao , "Zn-vacancy induced violet emission in p-type phosphorus and nitrogen codoped ZnO thin films grown by pulsed laser deposition" , Applied Surface Science, vol. 347,pp. 96-100, (Aug 2015).

  16. Nitin Prasad, Prasad Sarangapani, Nikhil K. S.,Nandita DasGupta, Amitava DasGupta, and Anjan Chakravorty, "An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors", IEEE Trans. on Electron Devices, vol.62, No.3, (March 2015).

  17. Sreenidhi T, D. S. Rawal, Amitava DasGupta, and Nandita DasGupta, "Evidence of Fowler – Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature", IEEE Transactions on Electron Devices, vol. 61, No. 12, pp 4291 - 4294, (Dec. 2014).

  18. Gourab Dutta, Sreenidhi T, Naveen K, Nandita DasGupta and Amitava DasGupta, "Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT", IEEE ED Letters, Vol 35, No.11, pp 1085-87, (Nov. 2014).

  19. Naveen K, Sreenidhi T, Nandita DasGupta and Amitava DasGupta , "A Continuous Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMTs valid for all Bias Voltages", IEEE Transactions on Electron Devices, Vol. 61, Issue 7, pp. 2343-49, (July 2014).

  20. Gowri Suresh Vesalapu, Nandita DasGupta, Shanti Bhattacharya, , "Digitally Tunable MOEMS Diffraction Gratings",Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3) Vol. 13, Issue 1,013001-1 to 013001-7  DOI: http://www/dx.doi.org/10.1117/1.JMM.13.1.013001. (2014).

  21. Sreenidhi T, Naveen K, A. Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta and Nandita DasGupta , "Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling", IEEE Transactions on Electron Devices, Special issue on GaN Electronic Devices, Vol.60, Issue 10,pp.3157-65, (October 2013).

  22. K. Kalai Selvi, Nandita DasGupta, Thirunavukkarasu K, "Effects of post oxidation annealing on electrical and interface properties of high pressure water vapor oxidized SiO2/SiC Metal-Oxide-Semiconductor Capacitors", 51. Thin Solid Films, Vol.531, pp 373-377, March 15, 2013.

  23. U. Radhakrishna, A. DasGupta, Nandita DasGupta, A. Chakravorty,"Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback and Self-Heating", 50. IEEE Transactions on Electron Devices, Vol. 58 , Issue 11, pp. 4035-4041,( 2011 ).

  24. K Kalaiselvi, T Sreenidhi, Nandita DasGupta, Heiner Ryssel, and Anton Bauer, "High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor", , Jpn. J. Appl. Phys. Vol. 50 10PG07, (2011).

  25. E. Senthil Kumar, Jyotirmoy Chatterjee, N. Rama, Nandita DasGupta and M. S. Ramachandra Rao, "A codoping route to realize low resistive and stable p-type conduction in (Li, Ni):ZnO thin films grown by pulsed laser deposition",  ACS Appl. Materials & Interfaces, Vol. 3, No.6, pp. 1974-79, (June 2011).

  26. Rathnamala Rao Nandita DasGupta and Amitava DasGupta, "Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using Analytical Threshold Voltage Model", IEEE Trans. On Device and Materials Reliability,Vol.10, No.2,pp247-253, (June 2010).

  27. Rupesh Kumar Navalakhe, Nandita DasGupta, and Bijoy Krishna Das, "Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform" ,  , vol. Appl. Opt. 48, G125-G130 (2009)..

  28. Binsu J Kailath, Amitava DasGupta, Nandita DasGupta and B N Singh and L M Kukreja, "Growth of Ultra-thin SiO2 by Laser Induced Oxidation, Semiconductor Science.",  & Technology. 24 , 105011 (2011).

  29. Nandita DasGupta T. Sreenidhi, K. Baskar, Amitava DasGupta "Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique, Electronics Letters", , vol.45, issue 10, pp.527-28, (May 2009).

  30. Rathnamala Rao, Guruprasad Katti, Dnaynesh S. Havaldar, Amitava DasGupta and Nandita DasGupta, "Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs",  Solid State Electronics ,vol 53, issue 3, pp 256-65, (March 2009).

  31. T.Erlbacher, T Graf, , Nandita DasGupta, A. J. Bauer and H.Ryssel, "Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers", , Jl. Vac. Sc. Tech. B, vol. 27, pp.482-485, (Jan 2009).

  32. T.Sreenidhi, K. Baskar, Amitava DasGupta ,and Nandita DasGupta "Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma",&bnsp;, Semicond. Sci. Technol., vol.23, (Article No. 125019),(2008).

  33. Aritra Dey, Anjan Chakravorty, Nandita DasGupta, and Amitava DasGupta, "Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs", , IEEE Trans. Electron Devices, vol.55, no.12, pp3418-25, (December 2008).

  34. Sheela D and Nandita DasGupta , "Optimization of Surface Passivation for InGaAs/InP PIN Photodetectors using Ammonium Sulfide", , Semicond. Scientific. Technology., vol.23, (Article No. 035018),(March 2008).

 

     copyrights ©   2017  ®   reserved.     Prof. Dr. Nandita DasGupta              MEMS                                                 EE                    IITM